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参数资料
| 型号： | IXTA200N075T7 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 200A TO-263-7 |
| 产品目录绘图： | TO-263-7 Package |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 200A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6800pF @ 25V |
| 功率 - 最大： | 430W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-7，D²Pak（6 引线+接片），TO-263CB |
| 供应商设备封装： | TO-263-7 |
| 包装： | 管件 |
IXTA 200N075T7
Symbol
Test Conditions
Characteristic Values
TO-263 (7-lead) (IXTA 7) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 ? (External)
70
115
6800
1040
190
31
57
54
52
160
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
35
43
nC
nC
0.35 ° C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min.
Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
80
200
540
1.0
A
A
V
ns
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| IXTA200N075T | MOSFET N-CH 75V 200A TO-263 |
| IXTA200N085T7 | MOSFET N-CH 85V 200A TO-263-7 |
| IXTA220N04T2-7 | MOSFET N-CH 40V 220A TO-263-7 |
| IXTA220N04T2 | MOSFET N-CH 40V 220A TO-263 |
| IXTA220N055T7 | MOSFET N-CH 55V 220A TO-263-7 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTA200N085T | 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA-200N085T | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:N-Channel Enhancement Mode Avalanche Rated |
| IXTA200N085T7 | 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA220N04T2 | 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA220N04T2-7 | 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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