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| 型号： | IXTA200N075T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 200A TO-263 |
| 产品目录绘图： | TO-263 Package |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 200A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6800pF @ 25V |
| 功率 - 最大： | 430W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
IXTA200N075T
IXTP200N075T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
70
115
6800
1040
190
31
57
S
pF
pF
pF
ns
ns
t d(off)
t f
R G = 5 ? (External)
54
52
ns
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
160
35
43
nC
nC
nC
Dim.
A
A1
b
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
R thJC
R thCH
TO-220
0.50
0.35 ° C/W
° C/W
b2
c
c2
D
D1
1.14
0.46
1.14
8.64
7.11
1.40
0.74
1.40
9.65
8.13
.045
.018
.045
.340
.280
.055
.029
.055
.380
.320
E
E1
9.65
6.86
10.29
8.13
.380
.270
.405
.320
Source-Drain Diode
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
e
L
L1
L2
L3
2.54
14.61
2.29
1.02
1.27
BSC
15.88
2.79
1.40
1.78
.100
.575
.090
.040
.050
BSC
.625
.110
.055
.070
I S
V GS = 0 V
200
A
L4
R
0
0.46
0.38
0.74
0
.018
.015
.029
I SM
V SD
t rr
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
80
540
1.0
A
V
ns
TO-220 (IXTP) Outline
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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| IXTA200N075T7 | 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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