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参数资料
| 型号： | IXTH50P10 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 50A TO-247AD |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 140nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4350pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
Standard
Power MOSFET
IXTH50P10
IXTT50P10
V DSS
I D25
R DS(on)
=
=
≤
- 100V
- 50A
55 m Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
-100
V
G
D
S
(TAB)
V DGR
T J = 25 ° C to 150 ° C, R GS = 1M Ω
-100
V
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
- 50
V
V
A
TO-268 (IXTT)
I DM
I A
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
- 200
- 50
30
A
A
mJ
G
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
300
- 55 ... +150
150
- 55 ... +150
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
300
260
1.13 / 10
6
5
° C
° C
Nm/lb.in.
g
g
International standard packages
JEDEC TO-247 AD
Low R DS(ON) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (< 5nH)
- easy to drive and to protect
Applications
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = - 250 μ A
Characteristic Values
Min. Typ. Max.
-100 V
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = - 250 μ A
V GS = ± 20V, V DS = 0V
V DS = 0.8 ? V DSS
V GS = 0V
V GS = -10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
- 3.0
- 5.0 V
± 100 nA
- 25 μ A
-1 mA
55 m Ω
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
? 2008 IXYS CORPORATION, All rights reserved
DS98905E(6/08)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTH52P10P | 功能描述:MOSFET -52.0 Amps -100V 0.050 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH54N30T | 功能描述:MOSFET 54 Amps 300V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH56N15T | 功能描述:MOSFET 56 Amps 150V 36 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH5N100 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Standard Power MOSFET |
| IXTH5N100A | 功能描述:MOSFET 5 Amps 1000V 2 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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