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参数资料
| 型号： | IXTH75N10 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 75A TO247AD |
| 标准包装： | 30 |
| 系列： | MegaMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 4mA |
| 闸电荷(Qg) @ Vgs： | 260nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AD |
| 包装： | 管件 |
MegaMOS TM FET
V DSS
I D25
R DS(on)
N-Channel Enhancement Mode
IXTH / IXTM 67N10
IXTH / IXTM 75N10
IXTT 75N10
100 V
100 V
67 A 25 m ?
75 A 20 m ?
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
TO-204 AE (IXTM)
(TAB)
I D25
T C = 25 ° C
67N10
75N10
67
75
A
A
I DM
P D
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
67N10
75N10
268
300
300
A
A
W
TO-268 (IXTT)
D
G
T J
-55 ... +150
° C
T JM
T stg
150
-55 ... +150
° C
° C
G
S
D (TAB)
M d
Mounting torque
1.13/10 Nm/lb.in.
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-204
TO-247
TO-268
18
6
5
10
g
g
g
° C
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
DC-DC converters
Synchronous rectification
Battery chargers
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
100
2.0
4
± 100
250
1
V
V
nA
μ A
mA
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25 67N10
75N10
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.025
0.020
?
?
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2003 IXYS All rights reserved
DS91533F(9/03)
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTH75N10 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXTH75N10L2 | 功能描述:MOSFET LinearL2 Powr MOSFET w/extended FBSOA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH75N15 | 功能描述:MOSFET 75 Amps 150V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH76N25T | 功能描述:MOSFET 76 Amps 250V 39 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH76P10T | 功能描述:MOSFET -76 Amps -100V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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