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| 型号： | IXTP70N085T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 70A TO-220 |
| 产品目录绘图： | TO-220, TO-251 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 70A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13.5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 59nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2570pF @ 25V |
| 功率 - 最大： | 176W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTA70N085T
IXTP70N085T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
30
52
2570
370
85
22
72
S
pF
pF
pF
ns
ns
t d(off)
t f
R G = 10 Ω (External)
40
40
ns
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
59
15
14.5
nC
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCS
TO-220
0.50
0.85 ° C/W
° C/W
b
b2
c
c2
D
0.51
1.14
0.46
1.14
8.64
0.99
1.40
0.74
1.40
9.65
.020
.045
.018
.045
.340
.039
.055
.029
.055
.380
D1
E
7.11
9.65
8.13
10.29
.280
.380
.320
.405
Source-Drain Diode
E1
e
6.86
2.54
8.13
BSC
.270
.100
.320
BSC
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
L
L1
L2
14.61
2.29
1.02
15.88
2.79
1.40
.575
.090
.040
.625
.110
.055
I S
V GS = 0 V
70
A
L3
L4
R
1.27
0
0.46
1.78
0.38
0.74
.050
0
.018
.070
.015
.029
I SM
Pulse width limited by T JM
190
A
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
90
1.1
V
ns
TO-220 (IXTP) Outline
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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