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| 型号： | IXTQ152N085T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 152A TO-3P |
| 标准包装： | 30 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 152A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 114nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5500pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
IXTH152N085T
IXTQ152N085T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
60
100
5500
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
720
pF
1
2
3
C rss
150
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 Ω (External)
30
50
50
ns
ns
ns
t f
45
ns
Terminals: 1 - Gate
2 - Drain
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
114
30
nC
nC
Dim.
3 - Source
Millimeter
Min. Max.
Tab - Drain
Inches
Min. Max.
Q gd
R thJC
R thCS
35
0.25
nC
0.42 ° C/W
° C/W
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
90
152
410
1.0
A
A
V
ns
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
.140 .144
0.232 0.252
.170 .216
242 BSC
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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