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参数资料
| 型号： | IXTV250N075TS |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 250A PLUS220SMD |
| 产品目录绘图： | PLUS220SMD |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 250A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9900pF @ 25V |
| 功率 - 最大： | 550W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PLUS-220SMD |
| 供应商设备封装： | PLUS-220SMD |
| 包装： | 管件 |
IXTV250N075T
IXTV250N075TS
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
PLUS220 (IXTV) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 50 A
R G = 3.3 ? (External)
75
122
9900
1330
285
32
50
58
S
pF
pF
pF
ns
ns
ns
t f
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
45
200
50
60
ns
nC
nC
nC
Terminals:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
R thJC
0.27 ° C/W
R thCS
PLUS220
.25
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic
Values
(T J = 25 ° C unless otherwise specified)
Min.
Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 50 A, -di/dt = 100 A/ μ s
80
250
560
1.0
A
A
V
ns
PLUS220SMD (IXTV_S) Outline
V R = 25 V, V GS = 0 V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
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| IXTV280N055T | 功能描述:MOSFET 280 Amps 55V 2.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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