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参数资料
| 型号： | JAN1N1199RA |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | ROHS COMPLIANT, DO-4, 1 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 125K |
| 代理商： | JAN1N1199RA |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93493
2
Revision: 24-Jun-08
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2√t x √tx
(3) Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° sinusoidal conduction
12 (1)
A
150 (1)
°C
Maximum peak one cycle
non-repetitive surge current
IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
VRRM applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
240 (1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with VRRM
applied following surge = 0
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
285
Maximum I2t for fusing
I2t
t = 10 ms
With rated VRRM applied
following surge,
initial TJ = 200 °C
260
A2s
t = 8.3 ms
240
Maximum I2t for individual
device fusing
t = 10 ms
With VRRM = 0 following
surge, initial TJ = 200 °C
370
t = 8.3 ms
340
Maximum I2
√t for individual
device fusing
I2
√t (2)
t = 0.1 to 10 ms, VRRM = 0 following surge
3715
A2
√s
Maximum forward voltage drop
VFM
IF(AV) = 12 A (38 A peak), TC = 25 °C
1.35 (1)
V
Maximum average
reverse current
VRRM = 50
IR(AV) (3)
Maximum rated IF(AV) and TC
3.0 (1)
mA
VRRM = 100
2.5 (1)
VRRM = 150
2.25 (1)
VRRM = 200
2.0 (1)
VRRM = 300
1.75 (1)
VRRM = 400
1.5 (1)
VRRM = 500
1.25 (1)
VRRM = 600
1.0 (1)
VRRM = 700
0.9 (1)
VRRM = 800
0.8 (1)
VRRM = 900
0.7 (1)
VRRM = 1000
0.6 (1)
相关PDF资料 |
PDF描述 |
|---|---|
| JAN1N3671A | 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTX1N1201RA | 12 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTX1N3670RA | 12 A, 700 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTX1N1206RA | 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTX1N1199RA | 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N1202A | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 12A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 200V 12A 2PIN DO-4 - Bulk |
| JAN1N1202AR | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 12A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 200V 12A 2PIN DO-4 - Bulk |
| JAN1N1202RA | 制造商: 功能描述: 制造商:NAE 功能描述: 制造商:undefined 功能描述: |
| JAN1N1204 | 制造商:Westinghouse 功能描述:12 A, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N1204A | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 400V 12A 2PIN DO-4 - Bulk |
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