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参数资料
| 型号： | JAN1N3172 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 300 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB |
| 封装： | METAL, DO-9, 1 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 73K |
| 代理商： | JAN1N3172 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0140 Rev. 1 (091750)
Page 3 of 3
PACKAGE DIMENSIONS
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
A
1.520
38.10
4
B
.530
.755
13.46
19.18
C
.063
.172
1.60
4.37
φD
1.100
27.94
φD1
.600
15.24
E
1.218
1.252
30.94
31.75
F
.250
.562
6.35
14.27
5
H
5.125
6.750
130.18
171.45
I1
.375
9.53
7
φM
.660
.745
16.76
18.92
2
M1
.125
3.18
6
N
.793
.828
20.14
21.03
Q
2.300
57.15
Q1
.375
9.53
6
φt
.265
.350
6.73
3.89
W
3
NOTES:
1.
Metric equivalents are given for general information only.
2.
Complete threads to extend to within 2.5 threads of seating
plane.
3.
.750-16 UNF-2A. Maximum pitch diameter of plated
threads shall be basic pitch diameter. .7094 (18.019 mm)
ref. (Screw Thread Standards for Federal Services) FED-
STD-H28.
4.
Angular orientation of terminal and tabulation with respect
to hex base is undefined. Square or radius on end of
terminal is undefined.
5.
A chamfer (or undercut) on one or both ends of hexagonal
portions is optional.
6.
Tabulation optional.
7.
Minimum flat.
8.
Flexible leads.
Physical dimensions for semiconductor devices
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