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参数资料
| 型号： | JAN1N3172R |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 整流器 |
| 英文描述： | 300 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB |
| 封装： | METAL, DO-9, 1 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 73K |
| 代理商： | JAN1N3172R |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/211
Glass Passivated Die
Glass to Metal Header Construction
Rugged Construction
High Surge Current Capability
T4-LDS-0140 Rev. 1 (091750)
Page 1 of 3
DEVICES
LEVELS
1N3164
1N3172
1N3164R
1N3172R
JAN
1N3168
1N3174
1N3168R
1N3174R
JANTX
1N3170
1N3170R
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 150°
IF
200
A
Average Forward Current, TC = 120°
IF
300
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 200°C
IFSM
6250
A
Thermal Resistance, Junction to Case
RθJC
0.20
°C/W
Typical Thermal Resistance
RθCS
0.80
°C/W
Operating Case Temperature Range
Tj
-65°C to 200°C
°C
Storage Temperature Range
TSTG
-65°C to 200°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IFM = 940A, TC = 25°C
VFM
1.55
V
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC = 25°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
IRM
10
mA
Reverse Current
VRM = 200, TC = 175°C
VRM = 400, TC = 175°C
VRM = 600, TC = 175°C
VRM = 800, TC = 175°C
VRM = 1000, TC = 175°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
IRM
30
mA
Note:
DO-205AB (DO-9)
相关PDF资料 |
PDF描述 |
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| JANTX1N3170R | 300 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AB |
| JANTXV1N3170R | 300 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AB |
| JANTX1N3172R | 300 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB |
| JANTXV1N3172R | 300 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N3174 | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 300A 2-Pin DO-9 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 300A 2PIN DO-205AB - Bulk |
| JAN1N3174R | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 300A 2-Pin DO-9 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 300A 2PIN DO-205AB - Bulk |
| JAN1N3189 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JAN1N3190 | 制造商:SMICON 功能描述: 制造商:WSTHSE 功能描述: |
| JAN1N3191 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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