参数资料
型号: JAN1N3600
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
封装: SIMILAR TO DO-7, 2 PIN
文件页数: 1/2页
文件大小: 34K
代理商: JAN1N3600
V F1
V F2
V F3
V F4
V F5
Limits
I F = 1 mA dc
I F = 10 mA dc
I F = 50 mA dc
I F = 100 mA dc I F = 200 mA dc
(Pulsed)
V dc
minimum
0.540
0.660
0.760
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Type
V BR
V RWM
I R1
1 R2
Ctrr
VR = 50 V dc
VR = 0; f = 1 Mhz;
IF=IR=10to100mAdc
IR = 10 A
TA = 25°C
TA = 150°C
ac signals = 50 mV (p-p)
RL = 100 ohms
V dc
V (pk)
A dc
pF
ns
1N3600
75
50
0.1
100
2.5
4
1N4150,-1
75
50
0.1
100
2.5
4
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N4150
and
1N4150-1
and
1N3600
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Forward Surge Current: 4A, (tp = 1s); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
1N4150-1 AVAILABLE IN
JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
1N3600 AVAILABLE IN
JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
SWITCHING DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed
glass case per MIL-S-19500/231
D0-35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL):
250 C/W maximum at L = .375
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
FORWARD VOLTAGE LIMITS – ALL TYPES
相关PDF资料
PDF描述
JAN1N4150-1 0.2 A, SILICON, SIGNAL DIODE, DO-35
JANTXV1N3645SM 0.25 A, SILICON, SIGNAL DIODE
JANTXV1N3646SM 0.25 A, SILICON, SIGNAL DIODE
JANTXV1N3647SM 0.25 A, SILICON, SIGNAL DIODE
JANTX1N3644SM 0.25 A, SILICON, SIGNAL DIODE
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