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参数资料
| 型号： | JAN1N3613EG1 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, EG1, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 66K |
| 代理商： | JAN1N3613EG1 |
JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1
Vishay Semiconductors
Document Number 88652
www.vishay.com
6-Mar-02
1
Patented*
Glass Passivated Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 1.0A
formerly
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level
Unit
J,JX 1N3611 J,JX 1N3612 J,JX 1N3613 J,JX 1N3614 J,JX 1N3957
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA = 55
°C
IF(AV)
1.0
A
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals super-imposed on IO = 750mA DC;
IFSM
30
A
VR = rated VRRM TA = 100°C (per MIL-STD-750 m 4066)
Typical thermal resistance(1)
R
θJL
38
°C/W
R
θJA
45
Operating junction and storage temperature range
TJ,TSTG
–65 to +175
°C
Barometric Pressure
Hg
8
54
87
mm
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Minimum reverse breakdown voltage at 50
AVBR
220
440
660
880
1100
V
Maximum instantaneous
at 1.0A, TA = 25°C
1.1
forward voltage Tp = 300
s
at 3.0A, TA = 25°CVF
1.3
V
at 1.0A, TA = –65°C
1.5
Maximum DC reverse current
TA = 25
°C
IR
1
A
at rated DC blocking voltage
TA = 150
°C
300
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
2.0
s
Typical junction capacitance at 4V, 1MHz
CJ
8.0
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Features
Qualified to MIL-PRF-19500/228
Class 1 high temperature metallurgically bonded
construction brazed > 600°C
1.0 ampere operation at TA = 55°C with no thermal runaway
Typical IR less than 0.1
A
Cavity-free, glass passivated junction. In epoxy over
hermetic glass
High temperature soldering guaranteed: 350°C/10 seconds,
0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: DO-204AL, molded epoxy over glass body (EG1)
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any Weight: 0.015oz., 0.4g
Flammability: Epoxy is rated UL 94V-0.
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602
and brazed-lead assembly by Patent No. 3,930,306
DO-204AL (EG1)
Dimensions
in inches and
(millimeters)
M
IL
I T
A
R Y
Q UA
L I
F
IE
D
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N3614EG1 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| JAN1N3611EG1 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| JANTX1N3957EG1 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
| JANTX1N3613EG1 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| JAN1N3957 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N3614 | 制造商:Microsemi Corporation 功能描述:Diode Switching 800V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk 制造商:Microsemi 功能描述:Diode Switching 800V 1A 2-Pin Case A |
| JAN1N3644 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1.5KV 0.25A 2PIN S - Bulk |
| JAN1N3645 | 制造商:Microsemi Corporation 功能描述:HIGH VOLTAGE RECTIFIER (HVR) - Bulk |
| JAN1N3646 | 制造商:Microsemi Corporation 功能描述:HIGH VOLTAGE RECTIFIER (HVR) - Bulk |
| JAN1N3647 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 3KV 0.25A 2PIN S - Bulk |
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