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参数资料
| 型号： | JAN1N3649R |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 整流器 |
| 英文描述： | 3.3 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | METAL, DO-4, 1 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 59K |
| 代理商： | JAN1N3649R |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
Qualified per MIL-PRF-19500/260
Glass Passivated Die
Glass to Metal Seal Construction
25 Amps Surge Rating VRRM to 1000 Volts
T4-LDS-0135 Rev. 1 (091678)
Page 1 of 3
DEVICES
LEVELS
1N1124A
1N1124RA
1N3649
1N3649R
JAN
1N1126A
1N1126RA
1N3650
1N3650R
1N1128A
1N1128RA
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 150°
IF
3.3
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C, T = 1/120s
IFSM
25
A
Thermal Resistance, Junction to Case
Rθjc
2.0
°C/W
Operating Case Temperature Range
TC
-65°C to 150°C
°C
Storage Temperature Range
Tstg
-65°C to 200°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 10A, Tj = 25°C*
VF
2.2
V
Reverse Current
VR = 200, Tj = 25°C
VR = 400, Tj = 25°C
VR = 600, Tj = 25°C
VR = 800, Tj = 25°C
VR = 1000, Tj = 25°C
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
IR
5
μA
Reverse Current
VR = 200, Tj = 150°C
VR = 400, Tj = 150°C
VR = 600, Tj = 150°C
VR = 800, Tj = 150°C
VR = 1000, Tj = 150°C
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
IR
200
μA
* Pulse test: Pulse width 300 sec, Duty cycle 2%
Note:
DO-203AA(DO-4)
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PDF描述 |
|---|---|
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| JAN1N3657US | 1 A, SILICON, SIGNAL DIODE |
| JANTXV1N3613US | 1 A, SILICON, SIGNAL DIODE |
| JAN1N3614US | 1 A, SILICON, SIGNAL DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N3650 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 3.3A 2PIN DO-203AA - Bulk |
| JAN1N3650R | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 3.3A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 3.3A 2PIN DO-203AA - Bulk |
| JAN1N3671A | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N3671AR | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N3671R | 功能描述:Diode Standard, Reverse Polarity 800V 12A Chassis, Stud Mount DO-203AA (DO-4) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/260 包装:散装 零件状态:在售 二极管类型:标准型， 反极性 电压 - DC 反向（Vr）（最大值）:800V 电流 - 平均整流（Io）:12A 不同 If 时的电压 - 正向（Vf）:1.35V @ 38A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 800V 不同?Vr，F 时的电容:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商器件封装:DO-203AA（DO-4） 工作温度 - 结:-65°C ~ 150°C 标准包装:1 |
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