参数资料
型号: JAN1N3830A
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 齐纳二极管
英文描述: 7.5 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-202AA
封装: HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
文件页数: 1/3页
文件大小: 137K
代理商: JAN1N3830A
1 Watt Metal Case Zener Diodes
WWW
.Microse
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i
.CO
M
S C O T TS DALE DIVISION
1N3821 thru 1N3830A, e3
1N3821
1N3830A,
e3
DESCRIPTION
APPEARANCE
This well established zener diode series for the 1N3821 thru 1N3830A
JEDEC registration in the glass hermetic sealed DO-13 package provides a
low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-
reliability applications where it is available in JAN, JANTX, and JANTXV
military qualifications. Higher voltages are also available in the 1N3016
thru 1N3051 series (6.8 V to 200 V) in the same package (see separate
data sheet). Microsemi also offers numerous other Zener diode products
for a variety of other packages including surface mount.
DO-13
(DO-202AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Zener Voltage Range: 3.3 V to 7.5 V
Hermetically sealed DO-13 metal package
Internally solder-bonded construction.
Also available in JAN, JANTX, JANTXV qualifications
per MIL-PRF19500/115 by adding the JAN, JANTX,
or JANTXV prefixes to part numbers for desired level
of screening, e.g. JANTX1N3821, JANTXV1N3051A,
etc.
Surface mount also available with 1N3821UR-1 thru
1N30330AUR-1 series on separate data sheet
RoHS Compliant devices available by adding “e3” suffix
Regulates voltage over a broad operating current
and temperature range
Low voltage selection from 3.3 to 7.5 V
Tight voltage tolerances available
Low reverse (leakage) currents
Nonsensitive to ESD
Hermetically sealed metal package
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Junction and Storage Temperatures:
-65
oC to +175oC
THERMAL RESISTANCE: 50oC/W* junction to lead
at 0.375 inches (10 mm) from body or 110
oC/W
junction to ambient when leads are mounted on FR4
PC board with 4 mm
2 copper pads (1 oz) and track
width 1 mm, length 25 mm
DC Power Dissipation*: 1 Watt at T
L < +125
oC 3/8”
(10 mm) from body or 1.0 Watts at TL < +65
oC when
mounted on FR4 PC board as described for thermal
resistance above (also see Fig 1)
Forward Voltage @ 200 mA: 1.5 Volts.
Solder Temperatures: 260 o C for 10 s (maximum)
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external surfaces are Tin-Lead (Pb/Sn)
or RoHS compliant annealed matte-Tin (Sn) plated
and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected case.
WEIGHT: 1.4 grams.
Tape & Reel option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
* For further mounting reference options, thermal resistance from junction to metal case is < 20
oC/W
when mounting DO-13 metal case directly on heat sink.
Microsemi
Scottsdale Division
Page 1
Copyright
2006
3-12-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
JANTX1N3891R 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
JAN1N3891 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
JANTXV1N3890R 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4
JANTXV1N3891R 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
JANTXV1N3891 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
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