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参数资料
| 型号： | JAN1N4153-1 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Silicon Switching Diode DO-35 Glass Package |
| 中文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-35 |
| 封装： | GLASS PACKAGE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 72K |
| 代理商： | JAN1N4153-1 |
6 Lake Street - Lawrence, MA 01841
Applications
Used in general purpose applications,where a low current controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond plating
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/337
Available up to JANTXV-1 levels
"S" level screening available to SCDs
Silicon Switching Diode
DO-35 Glass Package
1N4153,
1N4153-1
1N4150
Maximum Ratings
Peak Inverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t
peak
= 1 Sec.)
BKC Power Dissipation T
L
= 50
o
C, L = 3/8" from body
Operating and Storage Temperature Range
Electrical Characteristics @ 25
o
C*
Forward Voltage
@ I
F
= 100 μA V
F
Forward Voltage
@ I
F
= 250 μA V
F
Forward Voltage
@ I
F
= 1.0 mA V
F
Forward Voltage
@ I
F
= 2.0 mAV
F
Forward Voltage
@ I
F
= 10 mA
Forward Voltage
@ I
F
= 20 mA
Reverse Leakage Current @ V
R
= 50 V
Breakdown Voltage @ I
R
= 5.0 μA
Capacitance @ V
R
= 0 V, f = 1mHz
Reverse Recovery Time (note 1)
Reverse Recovery Time (note 2)
Symbol
PIV
I
Avg
I
Fdc
I
peak
P
tot
T
Op & St
-65 to +200
Minimum
Maximum
0.49
Vf 0.53
Vf 0.59
Vf 0.62
V
F
0.70
V
F
0.74
I
R
PIV
75
C
T
t
rr
t
rr
Value
75 (Min.)
150
300
0.25
500
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
C
Unit
Volts
Volts
Volts
Volts
Volts
Volts
μA
Volts
pF
nSecs
nSec
Symbol
Vf
0.55
0.59
0.67
0.70
0.81
0.88
0.05(50 @ 150
o
C)
2.0
4.0
2.0
Note 1: Per Method 4031-A with I
F
= I
R
= 10 mA, R
L
= 100 Ohms, C = 3 Pf. *Unless Otherwise Specified
Note2: Per Method 4031-A with I
F
= I
R
= 10 mA, Rr = 6 Volts, Rl=100 ohms.
DO-35 Glass Package
Dia.
0.06-0.09"
1.53-2.28 mm
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
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