- 您现在的位置：买卖IC网 > PDF目录131825 > JAN1N4153UR-1 0.15 A, SILICON, SIGNAL DIODE, DO-213AA PDF资料下载
参数资料
| 型号： | JAN1N4153UR-1 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| 封装： | GLASS PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 32K |
| 代理商： | JAN1N4153UR-1 |
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N4153UR-1 AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/337
SWITCHING DIODE
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE (ROJEC):
100 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N4153UR-1
CDLL4153
V F1
V F2
V F3
V F4
V F5
V F6
Limits
I F = 100 A dc
I F = 250 A dc
I F = 1 mA dc
I F = 2 mA dc
I F = 10 mA dc
I F = 20 mA dc
V dc
minimum
0.49
0.53
0.59
0.62
0.70
0.74
maximum
0.55
0.59
0.67
0.70
0.81
0.88
Type
V BR
V RWM
I R1
1 R2
Ctrr
VR = 50 V dc
VR = 0; f = 1 Mhz;
IR = 5 ATA = 25°C
TA = 150°C
V dc
V (pk)
nA dc
A dc
pF
ns
4153UR-1
75
50
2.0
4
CDLL4153
75
50
2.0
4
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 150 mA @ TA = +25°C
Derating: 1.0 mA dc/°C Above TA = +25°C
Forward Surge Current: 2A (pk), (tp = 1s); 0.25A (pk), (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
FORWARD VOLTAGE LIMITS – ALL TYPES
相关PDF资料 |
PDF描述 |
|---|---|
| JAN1N6626U | 2 A, SILICON, RECTIFIER DIODE |
| JANTX1N6657R | 40 A, SILICON, RECTIFIER DIODE, TO-254AA |
| JAN1N4246 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| JAN1N5554US | 3 A, SILICON, RECTIFIER DIODE |
| JAN1N3295A | 100 A, 1000 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N4245 | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N4246 | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N4246A | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JAN1N4247 | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk 制造商: 功能描述: 制造商:General Instruments 功能描述: 制造商:undefined 功能描述: 制造商:Microsemi Corporation 功能描述:DIODE STD REC 600V 1A |
| JAN1N4248 | 制造商:Microsemi Corporation 功能描述:Diode Switching 800V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
发布紧急采购，3分钟左右您将得到回复。