参数资料
型号: JAN1N4454
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
封装: HERMATIC SEALED, GLASS PACKAGE-2
文件页数: 1/2页
文件大小: 311K
代理商: JAN1N4454
1
Revision Date: 12/7/2009
New Product
Silicon Switching Diode Series
1N4454 and 1N4454-1
Maximum Ratings @ 25°C
Operating & Storage Temperature: -55 °C to +175 °C
Operating Current: 200mA, TA= +75 °C
Derating Factor:
2.0mA dc/°C above TA= +75 °C @ L = 3/8
Surge Current A:
2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1us, VRM = 0
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
VBR
V RWM
I0
Vf1@I F = 10 mA
Vf2@I F = 10 mA
trr
IR1
IR2 @ 50 V
CAPACITANCE
@5μA
TA = 150°C
@ 50 V dc
TA = 150°C
@ 0 V
Volts
Volts (pk)
mA
V dc
n sec
μA
pF
75
50
200
0.8
0.7
4
0.1
100
2.0
DC Electrical Characteristics
LEADED DESIGN DATA
CASE: Hermetically sealed glass case per MIL-S-19500/144, DO – 35
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (RJL): 250 °C/W maximum at L = 0.375 in
THERMAL IMPEDANCE: (ZJX): 70 °C/W maximum
POLARITY: Cathode end is banded.
0.107
2.178
MAX
DIA
POLARITY
BAND
(CATHODE)
0.028 / 0.034
0.711 / 0.886
DIA
0.205
5.207
MAX
1.000
25.400
MIN
All dimensions in INCH
mm
Outline Drawing
相关PDF资料
PDF描述
JANTX1N4454 0.2 A, SILICON, SIGNAL DIODE, DO-35
JAN1N4454-1 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
JANTXV1N4531UR 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
JAN1N4531UR 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
JANTX1N4531UR 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
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