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参数资料
| 型号： | JAN1N5141A |
| 元件分类： | 变容二极管 |
| 英文描述： | 12 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 封装： | GLASS PACKAGE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 33K |
| 代理商： | JAN1N5141A |
P.O. BOX 609
ROCKPORT, MAINE 04856 207-236-6076 FAX 207-236-9558
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5139 - 1N5148
1N5139A - 1N5148A
PART
CAPACITANCE @ 4 Vdc
CAPACITANCE RATIO
MIN QUALITY FACTOR
NUMBER
pF
C4V / C60V
Q @ 4 Vdc
MIN
NOM
MAX
MIN
f = 50 MHz
1N5139
6.12
6.8
7.48
2.7
350
1N5139A
6.46
6.8
7.14
2.7
350
1N5140
9.0
10.0
11.0
2.8
300
1N5140A
9.5
10.0
10.5
2.8
300
1N5141
10.8
12.0
13.2
2.8
300
1N5141A
11.4
12.0
12.6
2.8
300
1N5142
13.5
15.0
16.5
2.8
250
1N5142A
14.3
15.0
15.7
2.8
250
1N5143
16.2
18.0
19.8
2.8
250
1N5143A
17.1
18.0
18.9
2.8
250
1N5144
19.8
22.0
24.2
3.2
200
1N5144A
20.9
22.0
23.1
3.2
200
1N5145
24.3
27.0
29.7
3.2
200
1N5145A
25.7
27.0
28.3
3.2
200
1N5146
29.7
33.0
36.3
3.2
200
1N5146A
31.4
33.0
34.6
3.2
200
1N5147
36.1
39.0
42.9
3.2
200
1N5147A
37.1
39.0
40.9
3.2
200
1N5148
42.3
47.0
51.7
3.2
200
1N5148A
44.7
47.0
49.3
3.2
200
Package Style
DO-7
DC Power Dissipation (Pd)
400 mW
Forward Current (If)
250 mA
Min Reverse Breakdown Voltage (Bvr)
@ Ir = 10 Adc
65 Vdc
Max Reverse Current (IR)
@ Vr = 55 Vdc
20 nAdc
Max Reverse Current (IR2)
@ Vr = 55 Vdc; Ta = 150°C
20 Adc
Temp Coefficient of Capacitance
@ Vr=4 Vdc; Ta -40 to +85°C
.03%/°C
Operating Temperature Range (Topr)
-65 to + 175°C
Storage Temperature Range (Tstg)
-65 to + 200°C
Voltage Tolerance:
Standard Device
±10%
Suffix A
± 5%
DENOTES MILITARY APPROVAL FOR JAN - JANTX - JANTXV
相关PDF资料 |
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|---|---|
| JAN1N5143A | 18 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| JANTXV1N5143A | 18 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| JANTX1N5139A | 6.8 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| JAN1N5143A | 18 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| JANTXV1N5142A | 15 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
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