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参数资料
| 型号： | JAN1N5189 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, E, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 100K |
| 代理商： | JAN1N5189 |
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
6-11-2008 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5186 thru 1N5190
1N5186
thru
1N5190
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 100 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast
and ultrafast device types in both through-hole and surface mount packages.
Package E
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N5186 to 1N5190 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 100 to 600 Volts.
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/424
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
Fast recovery 3 Amp rectifiers 100 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 20oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 1.5oC/W @ 10 ms heating time
Average Rectified Forward Current (I
O): 3.0 Amps @ TA
= 25C and 0.700 Amps at TA = 150C
Forward Surge Current: 80 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT:
750 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
FORWARD
VOLTAGE
VF
@ 9A (pulsed)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME
trr
AVERAGE
RECTIFIED
CURRENT AMPS
IO
25
oC
100
oC
25
oC
150
oC
TYPE
VOLTS
MIN
VOLTS
MAX
VOLTS
A
ns
AMPS
1N5186
1N5187
1N5188
1N5189
1N5190
100V
200V
400V
500V
600V
120V
240V
480V
550V
660V
0.9V
1.5V
2.0
100
150
200
250
300
400
3.0
0.7
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N5190 | 3 A, SILICON, RECTIFIER DIODE |
| JANTXV1N5187 | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5190 | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5186 | 3 A, SILICON, RECTIFIER DIODE |
| JAN1N5186 | 3 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N5189US | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5190 | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 3A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5190US | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5194 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 70V 0.2A 2PIN DO-35 - Bulk |
| JAN1N5194UR | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 80V 0.2A 2PIN DO-213AA - Bulk |
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