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参数资料
| 型号： | JAN1N5418US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 170K |
| 代理商： | JAN1N5418US |
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5415US thru 1N5420US
1N5415
thru
1N5420
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from
50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category I” metallurgical bond. These devices are also available in axial-
leaded packages for thru-hole mounting (see separate data sheet for 1N5415 thru
1N5420). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speeds.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5415 to 1N5420 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 50 to 600 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
Axial-leaded equivalents also available (see separate
data sheet for 1N5415 thru 1N5420)
Fast recovery 3 Amp rectifiers 50 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +175oC
Storage Temperature: -65
oC to +175oC
Thermal Resistance: 10
oC/W junction to endcap
Thermal Impedance: 1.5
oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 3 Amps @
TA = 55C and 2 Amps @ TA = 100C (see Note 1)
Forward Surge Current (8.3 ms half sine): 80 Amps
Solder temperatures: 260
oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver with Tin/Lead (Sn/Pb) finish.
Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT:
539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
AVERAGE
RECTIFIED
CURRENT IO
(NOTE 1)
TYPE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
VOLTS
MIN.
VOLTS
MAX.
VOLTS
25
oC
A
100
oC
A
MAXIMUM
REVERSE
RECOVERY
TIME trr
(NOTE 2)
ns
55
oC
AMPS
100
oC
AMPS
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
50V
100V
200V
400V
500V
600V
55V
110V
220V
440V
550V
660V
0.6
1.5
1.0
20
150
250
400
3.0
2.0
NOTE 1: From 3.0 Amps at TA = 55
oC, derate linearly at 22 mA/ oC to 2.0 Amps at T
A = 100
oC. Above T
A = 100
oC, derate
linearly to zero at TA = 175
oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175
oC.
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N5416US | 3 A, SILICON, RECTIFIER DIODE |
| JANS1N5419US | 3 A, SILICON, RECTIFIER DIODE |
| JANS1N5417US | 3 A, SILICON, RECTIFIER DIODE |
| JAN1N5415US | 3 A, SILICON, RECTIFIER DIODE |
| JANS1N5416US | 3 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N5419 | 制造商:Microsemi Corporation 功能描述:Diode Switching 500V 3A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk 制造商:Microsemi 功能描述:Diode Switching 500V 3A 2-Pin Case E |
| JAN1N5419US | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5420 | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5420US | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5465B | 制造商:CRYSTL 功能描述: |
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