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参数资料
| 型号： | JAN1N5616US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 149K |
| 代理商： | JAN1N5616US |
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5614US thru 1N5622US
1N5614US
–
1N5622US
DESCRIPTION
APPEARANCE
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. These devices are also available in
axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru
1N5622). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65
oC to +200oC
Thermal Resistance: 13
oC/W junction to end cap
Thermal Impedance: 4.5
oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55C and 0.75 Amps @ TA = 100C
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWARD
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(NOTE 3)
trr
VOLTS
AMPS
VOLTS
μA
AMPS
μs
55
oC
100
oC
25
oC
100
oC
1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
200
400
600
800
1000
220
440
660
880
1100
1.00
.750
0.8 MIN.
1.3 MAX.
0.5
25
30
2.0
NOTE 1: From 1 Amp at TA = 55
oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at T
A = 100
oC. From T
A = 100
oC,
derate linearly at 7.5 mA/
oC to 0 Amps at T
A = 200
oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175
oC.
NOTE 2: TA = 100
oC, f = 60 Hz, I
O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Microsemi
Scottsdale Division
Page 1
Copyright
2009
10-06-2009 REV D; SA7-45.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N5711UR-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANS1N5711UR-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JAN1N5711UR-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTXV1N5711 | SILICON, SIGNAL DIODE, DO-35 |
| JAN1N5711 | SILICON, SIGNAL DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N5617 | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk 制造商:Microsemi 功能描述:Diode Switching 400V 1A 2-Pin Case A |
| JAN1N5617US | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5618 | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 1A 2-Pin Case A 制造商:Semtech Corporation 功能描述:Diode Switching 600V 1A 2-Pin Case G-2 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N5618US | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N5619 | 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
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