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参数资料
| 型号： | JAN1N6123AUS |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, E-MELF-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 169K |
| 代理商： | JAN1N6123AUS |
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
1N6
103
US
–
1N6
137
AUS
1N6
139
US
ELECTRICAL CHARACTERISTICS
INDUSTRY TYPE
NUMBER
(Note 4)
PPP Rating
MINIMUM
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID@ VWM
500W
1500W
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
MAXIMUM
PEAK PULSE
CURRENT IPP
500 W
1500 W
MAXIMUM
TEMP.
COEF. OF
V(BR)
500W
1500W
Volts
mA
Volts
uA
Volts
Amps
%/
oC
1N6103AUS
1N6139AUS
7.13
175
5.7
50
300
11.2
44.6
133.9
.06
1N6104AUS
1N6140AUS
7.79
150
6.2
20
100
12.1
41.3
124.0
.06
1N6105AUS
1N6141AUS
8.65
150
6.9
20
100
13.4
37.3
111.9
.06
1N6106AUS
1N6142AUS
9.50
125
7.6
20
100
14.5
34.5
103.4
.07
1N6107AUS
1N6143AUS
10.45
125
8.4
20
15.6
32.0
96.2
.07
1N6108AUS
1N6144AUS
11.40
100
9.1
20
16.9
29.6
88.8
.07
1N6109AUS
1N6145AUS
12.35
100
9.9
20
18.2
27.5
82.4
.08
1N6110AUS
1N6146AUS
14.25
75
11.4
20
21.0
23.8
71.4
.08
1N6111AUS
1N6147AUS
15.20
75
12.2
20
22.3
22.4
67.3
.08
1N6112AUS
1N6148AUS
17.10
65
13.7
1
10
25.1
19.9
59.8
.085
1N6113AUS
1N6149AUS
19.0
65
15.2
1
5
27.7
18.0
54.2
.085
1N6114AUS
1N6150AUS
20.9
50
16.7
1
5
30.5
16.4
49.2
.085
1N6115AUS
1N6151AUS
22.8
50
18.2
1
5
33.3
15.0
45.0
.09
1N6116AUS
1N6152AUS
25.7
50
20.6
1
5
37.4
13.4
40.1
.09
1N6117AUS
1N6153AUS
28.5
40
22.8
1
5
41.6
12.0
36.0
.09
1N6118AUS
1N6154AUS
31.4
40
25.1
1
5
45.7
10.9
32.8
.095
1N6119AUS
1N6155AUS
34.2
30
27.4
1
5
49.9
10.0
30.1
.095
1N6120AUS
1N6156AUS
37.1
30
29.7
1
5
53.6
9.3
28.0
.095
1N6121AUS
1N6157AUS
40.9
30
32.7
1
5
59.1
8.5
25.4
.095
1N6122AUS
1N6158AUS
44.7
25
35.8
1
5
64.6
7.7
23.2
.095
1N6123AUS
1N6159AUS
48.5
25
38.8
1
5
70.1
7.1
21.4
.095
1N6124AUS
1N6160AUS
53.2
20
42.6
1
5
77.0
6.5
19.5
.095
1N6125AUS
1N6161AUS
58.9
20
47.1
1
5
85.3
5.9
17.6
.100
1N6126AUS
1N6162AUS
64.6
20
51.7
1
5
97.1
5.1
15.4
.100
1N6127AUS
1N6163AUS
71.3
20
56.0
1
5
103.1
4.8
14.5
.100
1N6128AUS
1N6164AUS
77.9
15
62.2
1
5
112.8
4.4
13.3
.100
1N6129AUS
1N6165AUS
86.5
15
69.2
1
5
125.1
4.0
12.0
.100
1N6130AUS
1N6166AUS
95.0
12
76.0
1
5
137.6
3.6
10.9
.100
1N6131AUS
1N6167AUS
104.5
12
86.6
1
5
151.3
3.3
9.9
.100
1N6132AUS
1N6168AUS
114.0
10
91.2
1
5
165.1
3.0
9.1
.100
1N6133AUS
1N6169AUS
123.5
10
98.8
1
5
178.8
2.8
8.4
.105
1N6134AUS
1N6170AUS
142.5
8
114.0
1
5
206.3
2.4
7.3
.105
1N6135AUS
1N6171AUS
152.0
8
121.6
1
5
218.4
2.3
6.9
.105
1N6136AUS
1N6172AUS
171.0
5
136.8
1
5
245.7
2.0
6.1
.110
1N6137AUS
1N6173AUS
190.0
5
152.0
1
5
273.0
1.8
5.5
.110
Note: 4
1
2
3
1
2
3
1
Notes: 1. Applies to both 500W and 1500W series for devices shown (see note 4)
2. Applies only to 500W series (1N6103US thru 1N6137US)
3.
Applies only to 1500W series (1N6139US thru 1N6173AUS)
4.
Part number without the A suffix has 5% higher VC, 5% lower minimum V(BR), and 5% lower IPP.
–
1N6
173
AUS
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
Microsemi
Scottsdale Division
Page 2
Copyright
2008
05-06-2008 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
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| JAN1N6164AUS | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| JANTX1N6152AUS | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| JANTX1N6506 | 0.5 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| JANTX1N6144US | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| JANTX1N6629 | 1.4 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N6123US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JAN1N6124 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JAN1N6124A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 42.6V 500W 2PIN E-LINE - Bulk |
| JAN1N6124AUS | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 42.6V 500W 2PIN MELF - Bulk |
| JAN1N6124US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
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