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参数资料
| 型号： | JAN1N6155A |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 117K |
| 代理商： | JAN1N6155A |
1N6138A
Thru
1N6173A
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
1500 Watt Axial Leaded TVS
FEATURES:
1500 Watts Peak Pulse Power (tp = 10/1000s)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Military & Industrial applications
DESCRIPTION
The 1N61xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using two p-n junction TVS diodes in a back-to-
back configuration, hermetically sealed in a voidless glass
package. The hermetically sealed package provides high
reliability in harsh environmental conditions. TVS diodes
are further characterized by their high surge capability, low
operating and clamping voltages, and a theoretically
instantaneous response time. This makes them ideal for
use as board level protection for sensitive semiconductor
components.
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
UNIT
Peak Pulse Power (tp = 10 x 1000s)
Ppk
1500
Watts
Operating Temperature
Tj
-65 to +175
°C
Storage Temperature
Tstg
-65 to +175
°C
Steady-State Power Dissipation @ TL = 75C (3/8”)
PD
5
Watts
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM
REVERSE
LEAKAGE
CURRENT
IR
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
TEST
CURRENT
IT
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
Ipp
tp = 1mS
TEMPERATURE
COEFFICIENT
OF VBR
α
Vz
MAXIMUM
REVERSE
LEAKAGE
CURRENT (Ir2)
TA=+150°C
(V)
(A)
(V)
(mA)
(V)
(A)
% / °C
(A)
1N6138A
5.2
500
6.46
175
10.5
142.8
0.05
12000
1N6139A
5.7
300
7.13
175
11.2
133.9
0.06
3000
1N6140A
6.2
100
7.79
150
12.1
124.0
0.06
2000
1N6141A
6.9
100
8.65
150
13.4
111.9
0.06
1200
1N6142A
7.6
100
9.50
125
14.5
103.4
0.07
800
1N6143A
8.4
20
10.45
125
15.6
96.2
0.07
800
1N6144A
9.1
20
11.40
100
16.9
88.8
0.07
600
1N6145A
9.9
20
12.35
100
18.2
82.4
0.08
600
1N6146A
11.4
20
14.25
75
21.0
71.4
0.08
400
1N6147A
12.2
20
15.20
75
22.3
67.3
0.08
400
1N6148A
13.7
10
17.10
65
25.1
59.8
0.085
400
1N6149A
15.2
5
19.0
65
27.7
54.2
0.085
400
1N6150A
16.7
5
20.9
50
30.5
49.2
0.085
400
1N6151A
18.2
5
22.8
50
33.3
45.0
0.09
400
1N6152A
20.6
5
25.7
50
37.4
40.1
0.09
400
1N6153A
22.8
5
28.5
40
41.6
36.0
0.09
400
1N6154A
25.1
5
31.4
40
45.7
32.8
0.095
400
1N6155A
27.4
5
34.2
30
49.9
30.1
0.095
400
1N6156A
29.7
5
37.1
30
53.6
28.0
0.095
400
1N6157A
32.7
5
40.9
30
59.1
25.4
0.095
400
1N6158A
35.8
5
44.7
25
64.6
23.2
0.095
400
1N6159A
38.8
5
48.5
25
70.1
21.4
0.095
400
1N6160A
42.6
5
53.2
20
77.0
19.5
0.095
400
1N6161A
47.1
5
58.9
20
85.3
17.6
0.100
400
1N6162A
51.7
5
64.6
20
97.1
15.4
0.100
400
1N6163A
56.0
5
71.3
20
103.1
14.5
0.100
400
1N6164A
62.2
5
77.9
15
112.8
13.3
0.100
400
1N6165A
69.2
5
86.5
15
125.1
12.0
0.100
400
1N6166A
76.0
5
95.0
12
137.6
10.9
0.100
400
1N6167A
83.6
5
104.5
12
151.3
9.9
0.100
400
1N6168A
91.2
5
114.0
10
165.1
9.1
0.100
400
1N6169A
98.8
5
123.5
10
178.8
8.4
0.105
400
1N6170A
114.0
5
142.5
8
206.3
7.3
0.105
400
1N6171A
121.6
5
152.0
8
218.4
6.9
0.105
400
1N6172A
136.8
5
171.0
5
245.7
6.1
0.110
400
1N6173A
152.0
5
190.0
5
273.0
5.5
0.110
400
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.
Available in
JAN, JTX, JTXV and JANS versions
per MIL-S-19500/516
相关PDF资料 |
PDF描述 |
|---|---|
| JTX1N6166A | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| JTX1N6173A | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| JTX1N6165A | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| JAN1N6157A | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| JAN1N6140A | 1500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N6155AUS | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 27.4V 1.5KW 2PIN MELF - Bulk |
| JAN1N6155US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JAN1N6156 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JAN1N6156A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 29.7V 1.5KW 2-Pin Case G 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 29.7V 1.5KW 2PIN G - Bulk |
| JAN1N6156AUS | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
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