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参数资料
| 型号： | JAN1N6635US |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 4.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 59K |
| 代理商： | JAN1N6635US |
NOMINAL
TEST
ZENER
CURRENT
ZZK(1)
SURGE
TYPE
VOLTAGE
IZT
@
REGULATION
CURRENT
VZ@IZT
ZZ@IZT
IZK=5mA
v VZ
IR
VR
IZSM
±5%
VOLTS
mA
OHMS
VOLTS
A VOLTS
AMPS
1N6632US
3.3
380
3.0
500
0.90
300
1.0
20.0
1N6633US
3.6
350
2.5
500
0.80
250
1.0
18.7
1N6634US
3.9
320
2.0
500
0.75
175
1.0
17.6
1N6635US
4.3
290
2.0
500
0.70
25
1.0
16.4
1N6636US
4.7
260
2.0
450
0.60
20
1.0
15.3
1N6637US
5.1
240
1.5
400
0.50
5
1.0
14.4
1N5968US
5.6
220
1.0
400
0.4
5000
4.28
20
1N5969US
6.2
220
1.0
1000
0.5
1000
4.74
20
DESIGN DATA
CASE: D-5B, Hermetically sealed glass
case, PER MIL-PRF 19500/356
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
10 C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 3
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
3.48
3.76
.137
.148
F
0.48
0.71
0.019 0.028
G
5.08
5.72
.200
.225
S
0.03MIN.
.001MIN.
FIGURE 1
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, JANTXV, AND JANS
PER MIL-PRF-19500/356
5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6632US
THRU
1N6637US
AND
1N5968US
AND
1N5969US
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 5W @ TEC=+125°C
Power Derating: 100mW/°C above TEC=+125°C
Forward Voltage: 1.5 V dc @ IF=1A dc
NOTE 1
IZK=1.0 mA for 1N5969
MAXIMUM ZENER IMPEDANCE
MAXIMUM REVERSE
LEAKAGE CURRENT
VOLTAGE
相关PDF资料 |
PDF描述 |
|---|---|
| JAN1N5968US | 5.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANS1N6633US | 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANTX1N6632US | 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANTXV1N6635US | 4.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANTXV1N6659R | 30 A, SILICON, RECTIFIER DIODE, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N6636 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.7V 5% 5W 2PIN E - Bulk |
| JAN1N6636US | 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.7V 5% 5W 2PIN D-5B - Bulk |
| JAN1N6637 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 5.1V 5% 5W 2PIN E - Bulk |
| JAN1N6637US | 制造商:Microsemi Corporation 功能描述:ZENER SGL 5.1V 5% 5W 2PIN D-5B - Bulk |
| JAN1N6638 | 制造商:Aeroflex / Metelics 功能描述:SWITCHING DIODE - Bulk 制造商:Microsemi Corporation 功能描述:SWITING 125V 0.3A 2PIN D - Bulk 制造商:Semtech Corporation 功能描述:Diode, Switching, 125V, 300mA |
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