参数资料
型号: JAN1N6643US
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.1 A, 50 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED GLASS PACKAGE-2
文件页数: 1/6页
文件大小: 562K
代理商: JAN1N6643US
1
Revision Date: 11/4/2009
New Product
Switching Diodes 1N6638 Series
1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643,
1N6638U & US, 1N6639U & US, 1N6640U & US,
1N6641U & US 1N6642U & US, 1N6643U & US
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature:
-65°C to +175°C
Operating Current:
300mA
Derating:
See Figure 5
Surge Current:
IFSM = 2.5A, half sine wave,
PW = 8.3ms
Thermal Resistance:
(RJEC): U & US 40 °C/W maximum at L = 0”
See Figure 6
(RJL): Leaded 150 °C/W maximum at L = .375”
See Figure 7
Thermal Impedance: (ZJX): 25 °C/W maximum
VFR / τfr @CT1
CT2
τrr
IR1
IR2
IR3
IR4
VBR @ IR
VWRM
IF = 200 mA
VR=0 V
VR=1.5 V IR = 10mA VR=VRWM
VR=20V
VR = VRWM
TYPES
IF = 10mA
TA = 150°C
V(pk)
μA
V(pk)
VFR
τfr
V(pk)
ns
pF
ns
nA dc
μA dc
1N6638, U & US
150
100
125
5.0
20
2.5
2.0
4.5
35
500
50
100
1N6639, U & US
100
10
75
5.0
10
2.5
4.0
100
90
1N6640, U & US
75
10
50
5.0
10
2.5
4.0
100
90
1N6641, U & US
75
10
50
5.0
10
3.0
5.0
100
90
1N6642, U & US
100
75
5.0
20
5.0
2.8
5.0
25
500
50
100
1N6643, U & US
75
100
50
5.0
20
5.0
2.8
6.0
50
500
75
100
Electrical Specifications @ TA = + 25 C ( Unless Otherwise Specified )
VF @ IF
VF2 @ IF
IF
TYPES
TA = -55°C
V dc
mA
(min)
(max)
(pulsed)
1N6638, U & US
1.1
1.2
200
0.8
10
1N6639, U & US
1.2
1.3
500
1N6640, U & US
0.54
0.62
-
1
0.76
0.86
50
0.82
0.92
100
0.87
1.0
1.1
200
1N6641, U & US
1.1
1.2
200
1N6642, U & US
1.0
10
1.2
100
1N6643, U & US
1.0
10
1.2
1.4
100
Features
Available in JAN, JAN TX, JANTXV
per MIL
‐PRF‐19500/578 & /609
Switching Diodes
Non
‐Cavity Glass Plackage
Category I Metallurgically Bonded
相关PDF资料
PDF描述
JANTXV1N6641U 0.2 A, 50 V, SILICON, SIGNAL DIODE
JANTX1N6639 0.5 A, 75 V, SILICON, SIGNAL DIODE
JAN1N6641US 0.2 A, 50 V, SILICON, SIGNAL DIODE
JAN1N6640U 0.2 A, 50 V, SILICON, SIGNAL DIODE
JANTXV1N6640U 0.2 A, 50 V, SILICON, SIGNAL DIODE
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