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参数资料
| 型号： | JAN1N6808UEG2 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA |
| 封装： | PLASTIC, DO-214BA, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 85K |
| 代理商： | JAN1N6808UEG2 |
Document Number 88654
www.vishay.com
26-Mar-02
1
JAN1N6804UEG2 thru JAN1N6810UEG2
Vishay Semiconductors
Patented*
Glass Passivated Rectifiers
Reverse Voltage 50 to 1000V
Forward Current 1.0A
formerly
3.95
4.8
.15
.41
0.75
1.60
4.95
5.85
2.0
3.3
2.35
3.5
1.0
1.7
2.3
3.3
0.005 (0.2 max)
DO-214BA (UEG2)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level
Parameter
Symb.
JJJ
J
JJJ
Unit
1N6804 1N6805 1N6806 1N6807 1N6808 1N6809 1N6810
Device marking code
JA
JB
JC
JD
JE
JF
JG
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL = 125°CIF(AV)
1.0
A
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals (per MIL-STD-750 m 4066) super-imposed
IFSM
25
A
on IO = 750mA DC; VR = rated VRRM, TA = 100°C
Typical thermal resistance(1)
R
θJL
25
°C/W
R
θJA
80
Operating junction and storage temperature range
TJ,TSTG
–55 to +175
°C
Barometric Pressure
Hg
8
33
Note: (1) Thermal resistance measured with devices P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas.
Features
Qualified to MIL-PRF-19500/669
Class 1 high temperature metallurgically bonded
construction brazed > 600°C
Cavity-free, glass passivated junction. In epoxy over
hermetic glass.
High temperature soldering guaranteed:
450°C/5 seconds at teminals
Ideal for surface mount applications Typical IR < 0.1
A
Built-in strain relief Easy pick and place
Complete device submersible temperature of 265°C for
10 seconds in solder bath
Mechanical Data
Case: DO-214BA, molded epoxy over glass body (UEG2)
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048oz, 0.120g
Flammability: Epoxy is rated UL 94V-0.
Dimensions in millimeters
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
M
IL
I T
A
R Y
Q UA
L I
F
IE
D
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N6806UEG2 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| JANTX1N6807UEG2 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| JANTX1N6804UEG2 | 1 A, 50 V, SILICON, SIGNAL DIODE |
| JANTX1N6810UEG2 | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| JAN1N6804UEG2 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA |
相关代理商/技术参数 |
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| JAN1N6840U3 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY CENTER TAP RECTIFIER - Bulk |
| JAN1N6841U3 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY CENTER TAP RECTIFIER - Bulk |
| JAN1N6842U3 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY CENTER TAP RECTIFIER - Bulk |
| JAN1N6843CCU3 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY CENTER TAP RECTIFIER - Bulk |
| JAN1N6844U3 | 功能描述:Diode Schottky 100V 15A Surface Mount U3 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/679 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:15A 不同 If 时的电压 - 正向（Vf）:900mV @ 15A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:100μA @ 100V 不同?Vr，F 时的电容:600pF @ 5V，1MHz 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U3 工作温度 - 结:-65°C ~ 150°C 标准包装:1 |
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