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参数资料
| 型号： | JAN2N2221A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 29K |
| 代理商： | JAN2N2221A |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
All Types
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
800
mAdc
Total Power Dissipation
All UA
@TA = 25°C
All other devices
PT
0.65
(2)
0.5
(1)
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
All UA
All other devices
R
θJA
210
325
0C/W
1) Derate linearly 3.08 m W/
0C above T
A = +37
0C
2) Derate linearly 4.76 m W/
0C above T
A = +63.5
0C
ELECTRICAL CHARACTERISTICS (TA = +25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
50
Vdc
Collector-Base Cutoff Current
VCB= 75 Vdc
VCB= 60 Vdc
ICBO
10
Adc
ηAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
IEBO
10
Adc
ηAdc
Collector-Base Cutoff Current
VCE = 50 Vdc
ICES
50
ηAdc
TECHNICAL DATA
TO-18 (TO-206AA)
2N2221A, AL, 2N2222A,
AL
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221A, AL, JAN, JTX, JTXV, JANS
2N2221AUA JAN, JTX, JTXV, JANS
2N2221AUB JAN, JTX, JTXV, JANS
2N2222A, AL JAN, JTX, JTXV, JANS
2N2222AUA JAN, JTX, JTXV, JANS
2N2222AUB JAN, JTX, JTXV, JANS
Processed per MIL-PRF-19500/255
NPN SILICON SWITCHING TRANSISTORS
MIL-PRF
QML
DEVICES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| JAN2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
| JAN2N2221AUB | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack |
| JAN2N2222 | 制造商:Motorola 功能描述:2N222 MOT'87 N6E2B |
| JAN2N2222A | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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