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参数资料
| 型号： | JAN2N2605 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 封装： | TO-46, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 54K |
| 代理商： | JAN2N2605 |
TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
Devices
Qualified Level
2N2604
2N2605
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2604
2N2605
Units
Collector-Base Voltage
VCBO
80
70
Vdc
Collector-Emitter Voltage
VCEO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
30
mAdc
Total Power Dissipation
@ TA = +25
0C(1)
PT
400
mW/
0C
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
0.437
0C/mW
1) Derate linearly 2.28 mW/
0C above TA = +250C
TO-46*
(TO-206AB)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 Adc
2N2604
2N2605
V(BR)CBO
80
70
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
60
Vdc
Emitter-Base Breakdown Current
IE = 10 Adc
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
VCB = 50 Vdc
ICBO
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
2.0
ηAdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
ICES
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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