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参数资料
| 型号： | JANKCF1N5811 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 封装： | DIE-1 |
| 文件页数： | 1/3页 |
| 文件大小： | 46K |
| 代理商： | JANKCF1N5811 |
MSC1345.PDF 02-23-99
1N5807
1N5809
1N5811
JANHCE and JANKCE
JANHCF and JANKCF
ELECTRICAL CHARACTERISTICS:
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
Reverse Current
Rated VR, TC = 25°°C
IR
.01
5
A
Reverse Current
Rated VR, TC = 100°°C
IR
1.0
150
A
Forward Voltage Drop IF = 4A, TC = 25°°C
VF
.84
.875
Volts
Junction Capacitance @ VR = 10V
Cj
45
60
Pf
REVERSE RECOVERY CHARACTERISTICS:
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
Reverse Recovery Time
IF = 1A, IR = 1A, IRR = 0.1A
Trr
2.5
30
ns
Forward Recovery Voltage @ 1A Tr = 8ns
Vrr
1.5
2.2
V
Forward Recovery Time
IFM = 500 mA
15
ns
6 AMPS
FAST RECOVERY
RECTIFIER CHIP
50 - 150 VOLTS
FEATURES:
Chip Outline Dimensions: 68 x 68 mils
Chip Thickness: 8 to 12 mils
Anode Metallization: Aluminum
Metallization Thickness: 70,000
Nominal
Bonding Area: 42 x 42 mils Min.
Back Metallization: Gold-3000
Nominal
Junction Passivated with Thermal Silicon Dioxide - Planar Design
Backside Available with Solderable Ag Backside as JANHCF or
JANKCF
TYPE
VR
VBR
IO Tj = 75°°C
JANHCE1N5807
50V
60V
6.0A
JANHCE1N5809
100V
110V
6.0A
JANHCE1N58011
150V
160V
6.0A
JANKCE1N5807
50V
60V
6.0A
JANKCE1N5809
100V
110V
6.0A
JANKCE1N58011
150V
160V
6.0A
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
Chip Type: RA
A
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