参数资料
型号: JANS1N3595-1
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.15 A, 125 V, SILICON, SIGNAL DIODE, DO-35
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 1/2页
文件大小: 117K
代理商: JANS1N3595-1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SWITCHING DIODE
– METALLURGICALLY BONDED
– HERMETICALLY SEALED
– DOUBLE PLUG CONSTRUCTION
– SOFT GLASS – DUMET CONSTRUCTION
Qualified per MIL-PRF-19500/241
LDS-0074 Rev. 2 (100246)
Page 1 of 2
DEVICES
LEVELS
1N3595A-1
JANS
MAXIMUM RATING AT 25°C
Operating Temperature:
-65°C to +175°C
Storage Temperature:
-65°C to +175°C
Surge Current A, sine 1S:
500mA
Surge Current A, sine 1S:
4A
Total Power Dissipation:
500mW
Operating Current:
150mA, TA = +25°C
D.C. Reverse Voltage (VRWM):
125V
DC ELECTRICAL CHARACTERISTICS
VF
IR
VBR
Ambient
(°C)
IF
mA
Min
V
Max
V
Ambient
(°C)
VR
V (dc)
Min
A
Max
A
Ambient
(°C)
IR
A
Min
V
Max
V
25
1
0.52
0.70
25
125
-
0.002
-55
100
150
-
25
5
0.60
0.765
150
125
-
3
25
10
0.65
0.80
25
50
0.74
0.88
25
100
0.79
0.92
25
200
0.83
1.00
AC ELECTRICAL CHARACTERISTICS AT 25°C
Min
Max
Unit
Capacitance @ 0V
-
8.0
pF
TRR @ IF = 10mA
VR = 35V
-
3.0
sec
DO-35
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