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参数资料
| 型号： | JANS1N5551 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, SILICON, RECTIFIER DIODE |
| 封装： | GLASS, E PACKAGE, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 代理商： | JANS1N5551 |
VOIDLESS-HERMITICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
6-11-2008 REV D
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5550 thru 1N5554
1N5550
–
1N5554
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/420 and is ideal for high-reliability applications where a failure cannot be
tolerated.
These industry-recognized 5.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US” suffix
(see separate data sheet for 1N5550US thru 1N5554US).
Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types in
both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N5550 to 1N5554 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/420
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet)
Standard recovery 5 Amp rectifiers series 200 to
1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Extremely robust construction
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +200oC
Storage Temperature: -65
oC to +175oC
Thermal Resistance: 22
oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 1.5
oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 5 Amps @
TL = 55C (see Note 1)
Forward Surge Current (8.3 ms half sine): 100 Amps
Solder temperatures: 260
oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper.
Note: Previous JANS inventory had
solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT:
750 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
FORWARD VOLTAGE
VF @ 9A (pk)
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR
@50
μA
VOLTS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1 @
TL=+55
oC
Note 1
AMPS
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55
o
C
Note 2
AMPS
MIN.
VOLTS
MAX.
VOLTS
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
μA
REVERSE
RECOVERY
trr
Note 3
μs
1N5550
220
200
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5551
440
400
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5552
660
600
5
3
0.6V (pk)
1.2V (pk)
1.0
2.0
1N5553
880
800
5
3
0.6V (pk)
1.3V (pk)
1.0
2.0
1N5554
1100
1000
5
3
0.6V (pk)
1.3V (pk)
1.0
2.0
NOTE 1: Rated at TL = 55C at L = 0.375 inch from body. Derate linearly at 41.6 mA/C above TL = 55C
NOTE 2: Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) rating is not exceeded.
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N5552 | 3 A, 600 V, SILICON, RECTIFIER DIODE |
| JAN1N5550 | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| JANTX1N5551 | 3 A, 400 V, SILICON, RECTIFIER DIODE |
| JAN1N5552 | 3 A, 600 V, SILICON, RECTIFIER DIODE |
| JAN1N5551 | 3 A, 400 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS1N5551US | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 5A 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) - Waffle Pack |
| JANS1N5552 | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 5A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:JANS1N5552 - Waffle Pack |
| JANS1N5552US | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 5A 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) - Waffle Pack |
| JANS1N5553 | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) - Waffle Pack |
| JANS1N5553US | 制造商:Microsemi Corporation 功能描述:Diode Switching 800V 5A 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) - Waffle Pack |
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