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参数资料
| 型号： | JANS1N6309 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 111K |
| 代理商： | JANS1N6309 |
VZ2
VZ1
IZ2
ZZ
ZZK
IZM
VZ (reg)
IZSM
VR
IR1
IR2
ND
NOM.
MIN.
TEST
@
SURGE
@
@250
A
TYPE
±5% @
@IZ1
CURRENT
IZ2
250
A
v VZ
25CTA=
1-3 kHz
IZ2
250
A
(1)
150C
VOLTS
mA
OHMS
mA
VOLTS
AMPS
VOLTS
A
A V/ Hz
1N6309
2.4
1.1
20
30
1200
177
1.5
2.5
1.0
100
200
1.0
1N6310
2.7
1.2
20
30
1300
157
1.5
2.2
1.0
60
150
1.0
1N6311
3.0
1.3
20
29
1400
141
1.5
2.0
1.0
30
100
1.0
1N6312
3.3
1.5
20
24
1400
128
1.6
1.8
1.0
5.0
20
1.0
1N6313
3.6
1.8
20
22
1400
117
1.6
1.65
1.0
3.0
12
1.0
1N6314
3.9
2.0
20
1700
108
1.6
1.5
1.0
2.0
12
1.0
1N6315
4.3
2.4
20
18
1400
99
0.9
1.4
1.0
2.0
12
1.0
1N6316
4.7
2.8
20
16
1500
90
0.5
1.27
1.5
5.0
12
1.0
1N6317
5.1
3.3
20
14
1300
83
0.4
1.17
2.0
5.0
12
1.0
1N6318
5.6
4.3
20
8.0
1200
76
0.4
1.10
2.5
5.0
10
2.0
1N6319
6.2
5.2
20
3.0
800
68
0.3
0.97
3.5
5.0
10
5.0
1N6320
6.8
6.0
20
3.0
400
63
0.35
1.23
4.0
2.0
50
5.0
DESIGN DATA
CASE: Hermetically sealed, Glass “D”
Body per MIL-PRF- 19500/533. D-5D
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL): 250
C/W maximum
THERMAL IMPEDANCE: (ZOJX): 15
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any
FIGURE 1
0.056/0.075
1.42/1.91
0.140/0.180
3.55/4.57
1.00
25.4
0.018/0.022
0.46/0.56
POLARITY
BAND
(CATHODE)
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, JANTXV, AND JANS
PER MIL-PRF-19500/533
500 mW ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6309
THRU
1N6320
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW @ TL=+75°C @ L=
3/
8”
Power Derating: 5mW/°C above TL=+75°C
Forward Voltage: 1.4V dc @ IF=1A dc (Pulsed)
NOTE 1
v VZ = VZ @ 20 mAdc minus VZ @ 2 mAdc
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N6313 | 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| JAN1N6331US | 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JAN1N6355US | 200 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANTX1N6348US | 100 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| JANTX1N6353US | 160 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS1N6309US | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 2.4V 5% 500mW 2-Pin B-MELF 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack |
| JANS1N6310 | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 2.7V 5% 500mW 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack |
| JANS1N6310US | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 2.7V 5% 500mW 2-Pin B-MELF 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack |
| JANS1N6311 | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 3V 5% 500mW 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack |
| JANS1N6311DUS | 功能描述:Zener Diode 3V 500mW ±1% Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/533 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:3V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:29 欧姆 不同?Vr 时的电流 - 反向漏电流:30μA @ 1V 不同 If 时的电压 - 正向（Vf）:1.4V @ 1A 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 标准包装:1 |
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