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参数资料
| 型号： | JANS1N6660DT1 |
| 元件分类： | 整流器 |
| 英文描述： | 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 123K |
| 代理商： | JANS1N6660DT1 |
SCHOTTKY RECTIFIER
30A, 45V
22DGQ045
JANS1N6660DT1
JANTX1N6660DT1
JANTXV1N6660DT1
Major Ratings and Characteristics
Description/Features
08/27/10
CASE STYLE
www.irf.com
1
Characteristics
1N6660DT1 Units
IF(AV)
30
A
VRRM (Per Leg)
45
V
IFSM @ tp = 8.3ms half-sine
(Per Leg)
300
A
VF @ 20Apk, TJ =125°C
0.70
V
(Per Leg)
TJ, Tstg Operating and storage -65 to 150
°C
HIGH EFFICIENCY SERIES
Case Outline and Dimensions - TO-254AA
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
12
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
NOTES:
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS T O JEDEC OUT LINE TO-254AA.
The 1N6660DT1 Doubler Schottky rectifier has been
expressly designed to meet the rigorous requirements
of high reliability environments. It is packaged in the
hermetic isolated TO-254AA package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest
circuit efficiency for typical high frequency switching
power supplies and resonent power converters. Full
MIL-PRF-19500 quality conformance testing is
available on source controlled drawings to TX, TXV and
S levels.
Hermetically Sealed
Center Tap
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long
Term Reliability
Electrically Isolated
Ref: MIL-PRF-19500/608
(ISOLATED BASE)
CATHODE
DOUBLER ANODE
1
2
3
(DIODE 1)
(DIODE 2)
PD-97555
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N6660DT1 | 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTX1N6660DT1 | 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANS1N6677UR-1 | 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA |
| JANS1N6677UR-1 | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTXV1N6677UR-1 | 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS1N6661 | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6661US | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6662 | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6662US | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6663 | 制造商:Microsemi Corporation 功能描述:Diode 600V 0.5A 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
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