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参数资料
| 型号： | JANS1N6761-1 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | DO-41 |
| 文件页数： | 1/2页 |
| 文件大小： | 40K |
| 代理商： | JANS1N6761-1 |
WORKING PEAK
MAXIMUM REVERSE
CDI
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
TYPE
VOLTAGE
AT RATED VOLTAGE
NUMBER
VRWM
VF@0.1A
VF@1.0A
VF@3.1A
I R@25°C
I R@100°C
VOLTS
mA
DSB5817
20
0.36
0.60
0.9
0.10
5.0
DSB5818
30
0.36
0.60
0.9
0.10
5.0
1N5819
40
0.36
0.60
0.9
0.10
5.0
J,JX,JV & JS
45
0.34
0.49
0.8
0.05
5.0
5819-1
1N6759
60
0.38
0.69
NA
0.10
6.0
1N6760
80
0.38
0.69
NA
0.10
6.0
1N6761
100
0.38
0.69
NA
0.10
6.0
J,JX,JV & JS
100
0.38
0.69
NA
0.10
12.0
6761-1
DSB1A20
20
0.36
0.60
0.9
0.10
5.0
DSB1A30
30
0.36
0.60
0.9
0.10
5.0
DSB1A40
40
0.36
0.60
0.9
0.10
5.0
DSB1A50
50
0.36
0.60
0.9
0.10
5.0
DSB1A60
60
0.38
0.69
NA
0.10
12.0
DSB1A80
80
0.38
0.69
NA
0.10
12.0
DSB1A100
100
0.38
0.69
NA
0.10
12.0
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
65
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @TL +55°C, L = 3/8”
Derating: 14 mA / °C above TL = +55°C, L = 3/8”
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed, DO – 41
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 70
°C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 12
°C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION: Any
1N5819-1 AND 1N6761-1AVAILABLE IN
JAN,JANTX, JANTXV,
AND JANS PER MIL-PRF-19500/586
1 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
METALLURGICALLY BONDED
1N5819
and
DSB5817 and DSB5818
and
1N6759 thru 1N6761
and
DSB1A20 thru DSB1A100
相关PDF资料 |
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| JANS1N941BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANS1N943BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANS1N944B-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| JANTX1N3019B-1 | 9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS1N6761UR-1 | 制造商:Microsemi Corporation 功能描述:Diode Schottky 100V 1A 2-Pin DO-213AB 制造商:Microsemi Corporation 功能描述:SCHOTTKY 100V 1A 2PIN DO-213AB - Waffle Pack 制造商:Microsemi 功能描述:Diode Schottky 100V 1A 2-Pin DO-213AB |
| JANS1N6843CCU3 | 制造商:International Rectifier 功能描述:Diode Schottky 100V 30A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:JANS1N6843CCU3 - Rail/Tube 制造商:International Rectifier 功能描述:SCHOTTKY CENTER TAP RECTIFIER - Bulk |
| JANS1N6844U3 | 制造商:International Rectifier 功能描述:Diode Schottky 100V 15A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:15A 100V HI REL SCHOTTKY DISCRETE DIODE SMD 0.5 PKG JANS - Rail/Tube 制造商:International Rectifier 功能描述:MIL SPEC IR IC |
| JANS1N7037CCU1 | 制造商:International Rectifier 功能描述:HIREL SCHOTTKY COMMON CATHODE DIODE SMD1PKG - Rail/Tube |
| JANS1N7038U3 | 制造商:International Rectifier 功能描述:Diode Schottky 150V 30A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:150V 30.000A OUTPUT - Rail/Tube |
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