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参数资料
| 型号： | JANS1N7062CCT1 |
| 元件分类： | 整流器 |
| 英文描述： | 100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 105K |
| 代理商： | JANS1N7062CCT1 |
35CGQ100, 1N7062CCT1
2
www.irf.com
Part number
1N7062CCT1
VR
Max. DC Reverse Voltage (V) (Per Leg)
VRWM Max. Working Peak Reverse Voltage (V) (Per Leg)
Voltage Ratings
100
Parameters
Limits
Units
Conditions
IF(AV) Max. Average Forward Current
35
A
50% duty cycle @ TC = 112.5 °C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
150
A
@ tp = 8.3 ms half-sine
Surge Current (Per Leg)
Absolute Maximum Ratings
Pulse Width < 300s, Duty Cycle < 2%
Parameters
Limits Units
Conditions
TJ
Max.Junction Temperature Range
-65 to 150
°C
Tstg
Max. Storage Temperature Range
-65 to 150
°C
RthJC Max. Thermal Resistance, Junction
1.25
°C/W
DC operation
See Fig. 4
to Case (Per Leg)
RthJC Max. Thermal Resistance, Junction
0.63
°C/W
DC operation
to Case (Per Package)
wt
Weight (Typical)
9.3
g
Die Size (Typical)
150X180
mils
Thermal-Mechanical Specifications
Case Style
TO-254AA
Parameters
Limits
Units
Conditions
VFM
Max. Forward Voltage Drop
0.76
V
@ 15A
(Per Leg) See Fig. 1
0.98
V
@ 30A
TJ = -55°C
1.06
V
@ 35A
0.79
V
@ 15A
1.01
V
@ 30A
TJ = 25°C
1.11
V
@ 35A
0.71
V
@ 15A
0.92
V
@ 30A
TJ = 125°C
0.99
V
@ 35A
IRM
Max. Reverse Leakage Current
0.07
mA
TJ = 25°C
VR = Rated VR
(Per Leg) See Fig. 2
40
mA
TJ = 125°C
CT
Max. Junction Capacitance (Per Leg)
1000
pF
VR = 5VDC ( 1MHz, 25°C )
LS
Typical Series Inductance (Per Leg)
7.8
nH
Measured from anode lead to cathode lead
6mm (0.025in.) from package
Electrical Specifications
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