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参数资料
| 型号： | JANS2N3749 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至111 |
| 文件页数： | 12/20页 |
| 文件大小： | 128K |
| 代理商： | JANS2N3749 |
MIL-PRF-19500/560E
2
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.) - Continued.
Switching
Limits
|hFE|
f = 10 MHz
VCE = 10 V dc
IC = 0.5 A dc
Cobo
VCE = 10 V dc
IE = 0
100 kHz
≤ f ≤
1 MHz
See figure 4
ton
See figure 5
toff
VCE(SAT)1
IC = 2.0 A dc
IB = 0.2 A dc
(1)
VBE(SAT)1
IC = 2.0 A dc
IB = 0.2 A dc
(1)
pF
s
V dc
Min
3.0
Max
15.0
250
0.2
2.2
0.7
1.2
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/396 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1.5A 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:900mV @ 100mA，1A 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-55°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:TO-205AD，TO-39-3 金属罐 供应商器件封装:TO-39（TO-205AD） 标准包装:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3810L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3810U | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3811 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
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