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| 型号： | JANS2N3997 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至111 |
| 文件页数： | 4/20页 |
| 文件大小： | 128K |
| 代理商： | JANS2N3997 |
MIL-PRF-19500/560E
12
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.3.
C6
1037
For solder die attach: VCB ≥ 10 V dc, TA = Room ambient as defined in the
general requirements of MIL-STD-750. 6,000 cycles.
*
C6
1027
For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = + 175°C min.
* 4.4.4 Group E inspection, Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein. Group E inspection shall be performed for qualification or re-
qualification only. In case qualification was awarded to a prior revision of the spec sheet that did not request the
performance of table II tests, the tests specified in table II herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Thermal resistance (to be performed for qualification inspection only). The thermal resistance
measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall
apply:
a.
Collector current magnitude during power application shall be 0.15 A dc.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be + 25
°C ≤ T
R ≤ +35° C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit shall be R
θJC = 17.5° C/W for TO-39 devices and RθJC = 1.7.5° C/W for U3 devices.
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