- 您现在的位置：买卖IC网 > PDF目录299232 > JANS2N5002 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA PDF资料下载
参数资料
| 型号： | JANS2N5002 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至210AA |
| 文件页数： | 6/19页 |
| 文件大小： | 103K |
| 代理商： | JANS2N5002 |
MIL-PRF-19500/512E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 – Continued
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 100 mA dc
hFE2
100
300
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE3
70
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 1.0 A dc;
pulsed (see 4.5.1)
hFE4
25
Collector – emitter
saturated voltage
3071
IC = 150 mA dc; IB = 15 mA dc
pulsed (see 4.5.1)
VCE(SAT)1
0.15
V dc
Collector – emitter
saturated voltage
3071
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1)
VCE(SAT)2
0.50
V dc
Collector – emitter
saturated voltage
3071
IC = 1.0 A dc; IB = 100 mA dc;
pulsed (see 4.5.1)
VCE(SAT)3
1.0
V dc
Base – emitter
Saturated voltage
3066
Test condition A; IC = 150 mA
dc; IB = 15 mA dc pulsed (see
4.5.1)
VBE(SAT)1
0.9
V dc
Base - emitter
Saturated voltage
3066
Test condition A; IC = 500 mA
dc; IB = 50 mA dc; pulsed (see
4.5.1)
VBE(SAT)2
1.2
V dc
Subgroup 3
High-temperature
operation:
TA = +150°C
Collector -base
cutoff current
3036
Bias condition D;
VCB = 60 V dc
ICBO3
25
A dc
Low-temperature
operation:
TA = -55°C
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE5
30
See footnotes at end of table.
相关PDF资料 |
PDF描述 |
|---|---|
| JANS2N5004 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANS2N6987 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116 |
| JANS2N6987U | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC |
| JANS2N6988 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | FP |
| JANS2N6989 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS2N5003 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 10A 3-Pin TO-59 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N5004 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N5109 | 制造商:Microsemi Corporation 功能描述:NPN Transistor 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANS2N5109UB | 制造商:Microsemi Corporation 功能描述:NPN Transistor |
| JANS2N5151 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
发布紧急采购，3分钟左右您将得到回复。