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参数资料
| 型号： | JANSF2N7381 |
| 英文描述： | 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 200伏300kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 257AA封装 |
| 文件页数： | 5/12页 |
| 文件大小： | 440K |
| 代理商： | JANSF2N7381 |
2
www.irf.com
IRHF7130
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
IS
Continuous Source Current (Body Diode)
8.0
ISM
Pulse Source Current (Body Diode)
3.2
VSD Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 8.0A, VGS = 0V
trr
Reverse Recovery Time
350
nS
Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
3.0
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
RthJC
Junction-to-Case
5.0
RthJ-PCB
Junction-to-Ambient
175
°C/W
Typical socket mount
Electrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Typ Max
Max
Max Units
Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
0.10
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.18
VGS = 12V, ID =5.0A
Resistance
0.185
VGS = 12V, ID = 8.0A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
2.5
S ( )VDS > 15V, IDS = 5.0A
IDSS
Zero Gate Voltage Drain Current
25
VDS= 80V ,VGS=0V
250
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
50
VGS =12V, ID =8.0A
Qgs
Gate-to-Source Charge
12
nC
VDS = 50V
Qgd
Gate-to-Drain (Miller) Charge
20
td(on)
Turn-On Delay Time
25
VDD = 50V, ID =8.0A
tr
Rise Time
55
VGS =12V, RG = 7.5
td(off)
Turn-Off Delay Time
55
tf
Fall Time
45
LS + LD
Total Inductance
7.0
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
1100
VGS = 0V, VDS = 25V
Coss
Output Capacitance
310
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
55
nA
nH
ns
A
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