- 您现在的位置：买卖IC网 > PDF目录299239 > JANSH2N7262U 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package PDF资料下载
参数资料
| 型号： | JANSH2N7262U |
| 英文描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| 中文描述： | 200伏1000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装 |
| 文件页数： | 6/12页 |
| 文件大小： | 269K |
| 代理商： | JANSH2N7262U |
www.irf.com
3
Pre-Irradiation
IRHE7230, JANSR2N7262U
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)1
600 to 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
200
—
200
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
25
—
50
A
VDS=160V, VGS =0V
RDS(on)
Static Drain-to-Source
—
0.35
—
0.48
VGS = 12V, ID =3.5A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
—
0.35
—
0.48
VGS = 12V, ID =3.5A
On-State Resistance (LCC-18)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHE7230 (JANSR2N7262U)
2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U)
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
—
1.4
—
1.4
V
VGS = 0V, IS = 5.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0
-5
-10
-15
-20
VGS
VDS
Cu
Br
Ion
LET
Energy
Range
VDS(V)
MeV/(mg/cm2))
(MeV)
(m)
@
VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
28
285
43
190
180
170
125
—
Br
36.8
305
39
100
50
—
相关PDF资料 |
PDF描述 |
|---|---|
| JANSH2N7394U | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| JANSR2N7434 | 250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| JANSR2N7465U3 | 400V 100kRad Hi-Rel Single N-Channel U3 Hardened MOSFET in a SMD-0.5 package |
| JANSR2N7466U3 | 500V 100kRad Hi-Rel Single N-Channel U3 Hardened MOSFET in a SMD-0.5 package |
| JANSF2N7270 | 500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANSH2N7268 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7268U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7269 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7269U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7270 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
发布紧急采购，3分钟左右您将得到回复。