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参数资料
| 型号： | JANSH2N7269 |
| 英文描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 200伏1000kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装 |
| 文件页数： | 4/12页 |
| 文件大小： | 440K |
| 代理商： | JANSH2N7269 |
12
www.irf.com
IRHF7130
Pre-Irradiation
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with V
Total Dose Irradiation with VGS
GS
GS Bias.
Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with V
Total Dose Irradiation with VDS
DS
DS Bias.
Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L=4.1mH
Peak IL = 3.5A, VGS =12V
ISD ≤ 3.5A, di/dt ≤ 140A/s,
VDD ≤ 100V, TJ ≤ 150°C
Foot Notes:
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Data and specifications subject to change without notice. 08/01
Case Outline and Dimensions TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
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