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参数资料
| 型号： | JANSH2N7270U |
| 英文描述： | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 500V 1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 6/12页 |
| 文件大小： | 311K |
| 代理商： | JANSH2N7270U |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
www.irf.com
3
Radiation Performance of Rad Hard HEXFETs
Table 1. Low Dose Rate
IRHM7450 IRHM8450
Parameter
100K Rads (Si) 1000K Rads (Si)
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
500
—
500
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
50
—
50
A
VDS=0.8 x Max Rating, VGS =0V
RDS(on)1
Static Drain-to-Source
—
0.45
—
0.6
VGS = 12V, ID = 7.0A
On-State Resistance One
VSD
Diode Forward Voltage
—
1.6
—
1.6
V
TC = 25°C, IS =11A,VGS = 0V
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V
DS bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHM7450. Post-irradiation limits of the de-
vices irradiated to 1 x 106 Rads (Si) are presented in
Table 1, column 2, IRHM8450. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide a
direct comparison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
Min Typ Max
Units
Test Conditions
VDSS
Drain-to-Source Voltage
—
400
—
400
V
Applied drain-to-source voltage during
gamma-dot
IPP
—
8
—
8
—
A
Peak radiation induced photo-current
di/dt
—
15
—
3
A/sec Rate of rise of photo-current
L1
27
—
133
—
H
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Fluence
Range
VDSBias
VGS Bias
Ion
(MeV/mg/cm2)
(ions/cm2)
(m)
(V)
Ni
28
3x 105
~41
275
-5
Radiation
Characteristics
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