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参数资料
| 型号： | JANSH2N7380 |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 100V的1000kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 257AA封装 |
| 文件页数： | 8/8页 |
| 文件大小： | 107K |
| 代理商： | JANSH2N7380 |
8
www.irf.com
IRHY7130CM
Pre-Irradiation
Pulse width
≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L=1.45mH
Peak IL = 14.4A, VGS =12V
ISD ≤ 14.4A, di/dt ≤ 395A/s,
VDD ≤ 100V, TJ ≤ 150°C
Foot Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions — TO-257AA
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
0.88 [.035]
0.64 [.025]
0.50 [.020]
C A
B
2X
3X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3X
3.81 [.150]
3.56 [.140]
3 = GAT E
1 = DRAIN
2 = S OURCE
NOT ES :
1. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
2. CONT ROLLING DIMENS ION: INCH.
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
PIN AS S IGNMENT S
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