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参数资料
| 型号： | JANSH2N7431 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 60V的1000kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装 |
| 文件页数： | 2/8页 |
| 文件大小： | 107K |
| 代理商： | JANSH2N7431 |
2
www.irf.com
IRHY7130CM
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
14.4
ISM
Pulse Source Current (Body Diode)
——
58
VSD
Diode Forward Voltage
—
1.8
V
Tj = 25°C, IS = 14.4A, VGS = 0V
trr
Reverse Recovery Time
—
275
nS
Tj = 25°C, IF = 14.4A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
2.5
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
1.67
RthJA
Junction-to-Ambient
—
80
Typical socket mount
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.11
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.18
VGS = 12V, ID =9.1A
Resistance
—
0.20
VGS = 12V, ID = 14.4A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
2.5
—
S ( )VDS > 15V, IDS = 9.1A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 80V ,VGS=0V
—
250
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
50
VGS =12V, ID =14.4A
Qgs
Gate-to-Source Charge
—
10
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
20
td(on)
Turn-On Delay Time
—
35
VDD = 50V, ID =14.4A
tr
Rise Time
—
75
VGS =12V, RG = 7.5
td(off)
Turn-Off Delay Time
—
70
tf
Fall Time
—
60
LS + LD
Total Inductance
—
7.0
—
Ciss
Input Capacitance
—
960
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
340
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
85
—
nA
nH
ns
A
°C/W
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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