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参数资料
| 型号： | JANSR2N7423U |
| 英文描述： | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 200伏100kRad高可靠性单P沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 3/8页 |
| 文件大小： | 126K |
| 代理商： | JANSR2N7423U |
www.irf.com
3
Radiation Characteristics
IRHN9250, JANSR2N7423U
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 — -200 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA V
DS
=-160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.317 — 0.317
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.315 — 0.315
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (SMD-1)
V
SD
Diode Forward Voltage
— -1.9 — - 1.9 V
100K Rads(Si)
1
300 K Rads (Si)
2
Units
Test Conditions
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHN9250 (JANSR2N7423U)
2. Part numbers IRHN93250 (JANSF2N7423U)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = -14A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=20V
Cu
28.0
285 43 -200 -200 -200 -200 —
Br
36.8
305 39 -200 -200 -160 -75 —
LET
Energy Range
V
DS
(V)
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
V
Cu
Br
相关PDF资料 |
PDF描述 |
|---|---|
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| IRHNA4160 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | SMT |
| IRHNA4260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHNA53Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNA54Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANSR2N7424 | 制造商:International Rectifier 功能描述:TRAMSISTOR - Rail/Tube |
| JANSR2N7424U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7425 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| JANSR2N7425/SLDC | 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature) |
| JANSR2N7425U | 制造商:International Rectifier 功能描述:JANSR2N7425U - Bulk |
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