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参数资料
| 型号： | JANTV1N6074 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 294K |
| 代理商： | JANTV1N6074 |
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
10-03-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6073 thru 1N6081
1N6073
thru
1N6081
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70C) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond.
These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US).
Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6073 to 1N6081 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or SP prefix respectively , e.g.
MX6076, MV6079, SP6081, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +155oC
Storage Temperature: -65oC to +155oC
Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073-6075, 75 Amps for 1N6076-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
Average Rectified Forward Current (I
O) at TL= +70
oC
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55
oC:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
Thermal Resistance L= 0 inch (RθJL): 13oC/W for
1N6073-6075, 8.5
oC/W for 1N6076-6078, and
5.0
oC/W for 1N6079-6081
Solder temperature: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
See package dimensions on last page
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| JANTX1N6075 | 3 A, SILICON, RECTIFIER DIODE |
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| JANTXV1N6124AUS | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
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| JANTVX2N3439UA | 制造商:Semtech Corporation 功能描述: |
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