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型号： JANTX1N5521D-1
厂商： MICROSEMI CORP
元件分类： 参考电压二极管
英文描述： Low Voltage Surface Mount 500 mW Avalanche Diodes
中文描述： 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封装： DO-7, 2 PIN
文件页数： 2/3页
文件大小： 194K
代理商： JANTX1N5521D-1
Low Voltage Surface Mount
500 mW Avalanche Diodes
SCOTTSDALE DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
W
M
.
C
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted. Based on DC measurements at
thermal equilibrium;
V
F
= 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE CURRENT
(Note 4)
NUMBER
(Note 1 and
Note 7)
V
Z
@ I
ZT
(Note 2)
VOLTS
OHMS
SUFFIX
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
4.7
10
22
2.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
7.5
1.0
35
0.5
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
12.0
1.0
90
0.05
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
17.0
1.0
100
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
24.0
1.0
100
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
33.0
1.0
100
0.01
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only V
Z
, I
R
, and V
F
.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for V
Z
, I
R
, and V
F
. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2.
ZENER VOLTAGE (V
Z
) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
o
C.
3.
ZENER IMPEDANCE (Z
Z
) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (I
ZT
) is superimposed on I
ZT
.
4.
REVERSE CURRENT (I
R
) –
Reverse currents are guaranteed and are measured at V
R
as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (I
ZM
) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
V
Z
) –
V
Z
is the maximum difference between V
Z
at I
ZT
and V
Z
at I
ZL
measured with the device junction in thermal equilibrium.
7.
PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
V
R
– VOLTS
JEDEC TYPE
NOMINAL
ZENER
VOLTAGE
TEST
CURRENT
I
ZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
Z
ZT
@ I
ZT
(Note 3)
I
R
μ
Adc
NON & A-
B-C-D
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
I
ZM
(Note 5)
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT I
Z
= 250
μ
A
N
D
μ
V/
√
Hz
REGULATION
FACTOR
V
Z
(Note 6)
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
LOW V
Z
CURRENT
I
ZL
(Note 6)
mAdc
3.3
3.6
3.9
4.3
20
20
20
20
26
24
22
18
5.0
3.0
1.0
3.0
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
5.1
5.6
6.2
6.8
5.0
3.0
1.0
1.0
26
30
30
30
2.0
2.0
1.0
1.0
8.2
9.1
10.0
11.0
1.0
1.0
1.0
1.0
40
45
60
80
0.5
0.1
0.05
0.05
13.0
14.0
15.0
16.0
1.0
1.0
1.0
1.0
90
100
100
100
0.01
0.01
0.01
0.01
18.0
19.0
20.0
22.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
25.0
28.0
30.0
1.0
1.0
1.0
100
100
100
0.01
0.01
0.01
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
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JANTX1N5521DUR-1 功能描述:Zener Diode 4.3V 500mW ±1% Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:4.3V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:18 欧姆 不同?Vr 时的电流 - 反向漏电流:3μA @ 1.5V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:DO-213AA（玻璃） 供应商器件封装:DO-213AA 标准包装:1
JANTX1N5522B-1 制造商:Aeroflex / Metelics 功能描述:LOW VOLTAGE AVALANCHE ZENER - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.7V 5% 417MW 2PIN DO-204AA - Bulk
JANTX1N5522BUR-1 制造商:Aeroflex / Metelics 功能描述:LOW VOLTAGE AVALANCHE ZENER - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.7V 5% 500MW 2PIN DO-213AA - Bulk
JANTX1N5522C-1 功能描述:Zener Diode 4.7V 500mW ±2% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:4.7V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:22 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 2V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35（DO-204AH） 标准包装:1
JANTX1N5522CUR-1 功能描述:Zener Diode 4.7V 500mW ±2% Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:4.7V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:22 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 2V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:DO-213AA（玻璃） 供应商器件封装:DO-213AA 标准包装:1
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