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参数资料
| 型号： | JANTX1N5807US |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 159K |
| 代理商： | JANTX1N5807US |
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5807US thru 1N5811US
1N5807US–1N5811US
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated.
These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category I” metallurgical bond.
These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807 thru 1N5811).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Microsemi
Scottsdale Division
Page 1
Copyright
2009
8-03-2009 REV F; SD42A
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5807 to 1N5811 series
Voidless-hermetically-sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
Axial-leaded equivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Temperature: -65
oC to +175oC.
Storage Temperature: -65
oC to +175oC.
Average Rectified Forward Current (IO): 6 Amps @
TEC = 75C End Cap temperature (see note 1)
Thermal Resistance: 6.5 C/W junction to end cap
Thermal Impedance: 1.5 C/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TEC=75C
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55C
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS
AMPS
VOLTS
μA
AMPS
ns
25
oC
100
oC 25oC 125oC
1N5807US
1N5809US
1N5811US
50
100
150
60
110
160
6.0
3.0
0.875
0.800
5
525
125
30
NOTE 1: Rated at TEC = 75C. Derate at 60 mA/C for TEC above 75C
NOTE 2: Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175C
NOTE 3: TA = 25
oC @ I
O = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/s min
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
|---|---|
| JAN1N5811US | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5809US | 3 A, SILICON, RECTIFIER DIODE |
| JANTXV1N5807US | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| JANTXV1N5811 | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5807 | 3 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX1N5809 | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 6A 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode Switching 100V 6A 2-Pin Case G-112 制造商:Microsemi Corporation 功能描述:JANTX1N5809 - Tape and Reel 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk 制造商:Microsemi 功能描述:Diode Switching 100V 6A 2-Pin Case E 制造商:Semtech 功能描述:Diode Switching 100V 6A 2-Pin Case G-112 |
| JANTX1N5809URS | 功能描述:Diode Standard 100V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:875mV @ 4A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:30ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 100V 不同?Vr，F 时的电容:60pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
| JANTX1N5809US | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 6A 2-Pin E-MELF 制造商:Semtech Corporation 功能描述:Diode Switching 100V 6A 2-Pin SMD 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays 制造商:Microsemi 功能描述:Diode Switching 100V 6A 2-Pin E-MELF |
| JANTX1N5811 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case G-112 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SWITCHING 150V 6A 2-PIN CASE E 制造商:Microsemi Corporation 功能描述:DIODE ULT FAST 150V 3A |
| JANTX1N5811CBUS | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin E-MELF |
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