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参数资料
| 型号： | JANTX1N5809US |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 159K |
| 代理商： | JANTX1N5809US |
APTGT150A120D1G
APT
G
T
150A120D
1G
–
Rev
1
Decem
ber
,2009
www.microsemi.com
3- 4
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
IGBT
0.18
RthJC
Junction to Case Thermal Resistance
Diode
0.34
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A
)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
10
50
90
130
170
210
IC (A)
Fmax,
O
p
era
ti
n
g
Freq
uen
cy
(k
Hz
)
VCE=600V
D=50%
RG=4.7
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
al
I
m
ped
a
nc
e
(
°C
/W)
Diode
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX1N5811 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case G-112 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SWITCHING 150V 6A 2-PIN CASE E 制造商:Microsemi Corporation 功能描述:DIODE ULT FAST 150V 3A |
| JANTX1N5811CBUS | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin E-MELF |
| JANTX1N5811URS | 功能描述:Diode Standard 150V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:875mV @ 4A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:30ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 150V 不同?Vr，F 时的电容:60pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
| JANTX1N5811US | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin E-MELF 制造商:Semtech Corporation 功能描述:Diode Switching 150V 6A 2-Pin SMD 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays |
| JANTX1N5812 | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 20A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 50V 20A 2PIN DO-4 - Bulk |
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