- 您现在的位置：买卖IC网 > PDF目录61493 > JANTX1N6761UR-1 (MICROSEMI CORP) 1 A, SILICON, SIGNAL DIODE, DO-213AB PDF资料下载
参数资料
| 型号： | JANTX1N6761UR-1 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| 封装： | DO-213AB |
| 文件页数： | 1/2页 |
| 文件大小： | 40K |
| 代理商： | JANTX1N6761UR-1 |
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
CDI
WORKING PEAK
MAXIMUM REVERSE
TYPE
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
NUMBER
VOLTAGE
AT RATED VOLTAGE
VRWM
VF @ 0.1A
VF @ 1.0A
VF @ 3.1A
IR @ +25°C
IR @ +100°C
VOLTS
mA
CDLL5817
20
0.36
0.60
0.9
0.1
5.0
CDLL5818
30
0.36
0.60
0.9
0.1
5.0
CDLL5819
40
0.36
0.60
0.9
0.1
5.0
J,JX,JV & JS
45
0.34
0.49
0.8
0.05
5.0
5819UR-1
CDLL6759
60
0.38
0.69
N/A
0.1
6.0
CDLL6760
80
0.38
0.69
N/A
0.1
6.0
CDLL6761
100
0.38
0.69
N/A
0.1
6.0
J,JX,JV & JS
100
0.38
0.69
N/A
0.10
12.0
6761UR-1
CDLL1A20
20
0.36
0.60
0.9
0.1
5.0
CDLL1A30
30
0.36
0.60
0.9
0.1
5.0
CDLL1A40
40
0.36
0.60
0.9
0.1
5.0
CDLL1A50
50
0.36
0.60
0.9
0.1
5.0
CDLL1A60
60
0.38
0.69
N/A
0.1
12.0
CDLL1A80
80
0.38
0.69
N/A
0.1
12.0
CDLL1A100
100
0.38
0.69
N/A
0.1
12.0
147
1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN
JAN, JANTX, JANTXV
AND JANS PER MIL-PRF-19500/586
1 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED
1N5819UR
and
CDLL5817 thru CDLL5819
and
CDLL6759 thru CDLL6761
and
CDLL1A20 thru CDLL1A100
FIGURE 1
DESIGN DATA
CASE: DO-213AB, Hermetically sealed
glass case. (MELF, LL41)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
40 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 12
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @TEC = +55°C
Derating: 14 mA / °C above TEC = +55°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
2.39
2.66
.094
.105
F
0.41
0.55
.016
.022
G
4.80
5.20
.189
.205
G1
4.11 REF.
.159 REF.
S
0.03 MIN.
.001 MIN.
相关PDF资料 |
PDF描述 |
|---|---|
| JANS1N6761UR-1 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB |
| JANS1N5819UR-1 | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| JANTX1N5819UR-1 | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| JAN1N6761UR-1 | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| JAN1N6761UR-1 | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX1N6762 | 制造商:Microsemi Corporation 功能描述:DUAL ULTRA FAST POWER RECTIFIER - Bulk |
| JANTX1N6762R | 制造商:Microsemi Corporation 功能描述:DUAL ULTRA FAST POWER RECTIFIER - Bulk |
| JANTX1N6763 | 制造商:Microsemi Corporation 功能描述:DUAL ULTRA FAST POWER RECTIFIER - Bulk |
| JANTX1N6763R | 制造商:Microsemi Corporation 功能描述:DUAL ULTRA FAST POWER RECTIFIER - Bulk |
| JANTX1N6764 | 制造商:Microsemi Corporation 功能描述:DUAL ULTRA FAST POWER RECTIFIER - Bulk |
发布紧急采购，3分钟左右您将得到回复。